IXBH12N300 IXYS, IXBH12N300 Datasheet - Page 3

• Manufacturer Part Number: IXBH12N300
• Description: IGBT 3000V 30A 160W TO247
• Manufacturer: IXYS
• Series: BIMOSFET™r

Specifications of IXBH12N300

• Voltage - Collector Emitter Breakdown (max): 3000V
• Vce(on) (max) @ Vge, Ic: 3.2V @ 15V, 12A
• Current - Collector (ic) (max): 30A
• Power - Max: 160W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247
• Vces, (v): 3000
• Ic25, Tc=25°c, (a): 30
• Ic90, Tc=90°c, (a): -
• Vce(sat), Typ, Tj=25°c, (v): 3.2
• Tf Typ, Tj=25°c, (ns): 530
• Gate Drive, (v): 15
• Rthjc, Max, (k/w): 0.78
• Package Style: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -

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6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
24
22
20
18
16
14
12
10
24
22
20
18
16
14
12
10
8
6
4
2
0
8
6
4
2
0
0.0
0.0
5
0.5
7
0.5
Fig. 5. Collector-to-Emitter Voltage
Fig. 1. Output Characteristics
9
Fig. 3. Output Characteristics
1.0
vs. Gate-to-Emitter Voltage
1.0
11
I
1.5
C
= 24A
1.5
12A
13
6A
V
V
V
@ 125ºC
2.0
@ 25ºC
CE
CE
GE
2.0
15
- Volts
- Volts
- Volts
2.5
V
17
GE
2.5
= 25V
3.0
V
20V
15V
19
GE
3.0
= 25V
3.5
15V
T
20V
J
21
= 25ºC
10V
5V
10V
5V
3.5
4.0
23
4.5
4.0
25
240
220
200
180
160
140
120
100
1.9
1.8
1.7
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
80
60
40
20
40
36
32
28
24
20
16
12
0
8
4
0
-50
3.5
0
2
V
4.0
Fig. 2. Extended Output Characteristics
GE
-25
4
= 15V
4.5
Fig. 4. Dependence of V
6
V
0
Fig. 6. Input Admittance
GE
5.0
Junction Temperature
8
= 25V
T
T
J
J
10
5.5
- Degrees Centigrade
25
= 125ºC
- 40ºC
25ºC
12
V
V
@ 25ºC
6.0
CE
GE
20V
15V
10V
5V
14
50
- Volts
- Volts
6.5
16
75
7.0
18
IXBH12N300
IXBT12N300
CE(sat)
20
7.5
100
I
C
22
= 24A
I
8.0
IXYS REF: B_12N300(4P)03-05-09
on
C
= 12A
24
I
125
C
8.5
= 6A
26
150
9.0
28