IXBH12N300 IXYS, IXBH12N300 Datasheet - Page 4

• Manufacturer Part Number: IXBH12N300
• Description: IGBT 3000V 30A 160W TO247
• Manufacturer: IXYS
• Series: BIMOSFET™r

Specifications of IXBH12N300

• Voltage - Collector Emitter Breakdown (max): 3000V
• Vce(on) (max) @ Vge, Ic: 3.2V @ 15V, 12A
• Current - Collector (ic) (max): 30A
• Power - Max: 160W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247
• Vces, (v): 3000
• Ic25, Tc=25°c, (a): 30
• Ic90, Tc=90°c, (a): -
• Vce(sat), Typ, Tj=25°c, (v): 3.2
• Tf Typ, Tj=25°c, (ns): 530
• Gate Drive, (v): 15
• Rthjc, Max, (k/w): 0.78
• Package Style: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -

IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.
18
16
14
12
10
35
30
25
20
15
10
16
14
12
10
8
6
4
2
0
5
0
8
6
4
2
0
500
0
0
Fig. 11. Reverse-Bias Safe Operating Area
5
V
I
I
T
R
dV / dt < 10V / ns
C
G
CE
5
J
G
= 12A
= 10mA
= 125ºC
= 30Ω
= 1kV
10
1000
10
15
Fig. 7. Transconductance
20
Fig. 9. Gate Charge
15
Q
G
1500
25
- NanoCoulombs
I
C
V
20
CE
- Amperes
30
- Volts
35
25
2000
40
T
J
= - 40ºC
30
45
125ºC
25ºC
50
35
2500
55
40
60
3000
45
65
10,000
1,000
1.00
0.10
0.01
100
10
0.00001
36
32
28
24
20
16
12
8
4
0
0.0
0
f = 1 MHz
5
Fig. 12. Maximum Transient Thermal
0.0001
0.5
Fig. 8. Forward Voltage Drop of
10
0.001
Fig. 10. Capacitance
Pulse Width - Seconds
1.0
Intrinsic Diode
15
Impedance
C oes
C res
C ies
V
V
T
CE
F
J
- Volts
0.01
= 25ºC
1.5
20
- Volts
25
2.0
0.1
IXBH12N300
IXBT12N300
30
T
J
= 125ºC
2.5
1
35
3.0
10
40