IXGH48N60C3C1 IXYS, IXGH48N60C3C1 Datasheet - Page 2

IGBT C3 48A 600V TO-247

IXGH48N60C3C1

Manufacturer Part Number
IXGH48N60C3C1
Description
IGBT C3 48A 600V TO-247
Manufacturer
IXYS
Series
GenX3SC™r
Datasheet

Specifications of IXGH48N60C3C1

Igbt Type
PT
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.5V @ 15V, 30A
Current - Collector (ic) (max)
75A
Power - Max
300W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-247
Vces, (v)
600
Ic25, Tc=25°c, Igbt, (a)
75
Ic90, Tc=90°c, Igbt, (a)
-
Ic110, Tc=110°c, Igbt, (a)
48
Vce(sat), Max, Tj=25°c, Igbt, (v)
2.5
Tfi, Typ, Tj=25°c, Igbt, (ns)
38
Eoff, Typ, Tj=125°c, Igbt, (mj)
0.57
Rthjc, Max, Igbt, (°c/w)
0.42
If, Tj=110°c, Diode, (a)
20
Rthjc, Max, Diode, (ºc/w)
0.9
Package Style
TO-247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Symbol
(T
g
C
C
C
Q
Q
Q
t
t
E
t
t
E
t
t
E
t
t
E
R
R
Reverse Diode (SiC)
Symbol
(T
V
R
Notes
IXYS Reserves the Right to Change Limits,Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or moreof the following U.S. patents: 4,850,072
d(on)
ri
d(off)
fi
d(on)
ri
d(off)
fi
fs
on
off
on
off
F
ies
oes
res
thJC
thCS
thJC
g
ge
gc
J
J
The product presented herein is under development. The Technical Specifications offered are derived
from data gathered during objective characterizations of preliminary engineering lots; but also may yet
contain some information supplied during a pre-production design evaluation. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
= 25°C, Unless Otherwise Specified)
= 25°C, Unless Otherwise Specified)
1. Pulse test, t ≤ 300μs, duty c ycle, d ≤ 2%.
2. Switching times & energy losses may increase for higher V
I
Inductive Load, T
I
V
Note 2
Inductive Load, T
I
V
Note 2
I
V
I
C
C
C
F
C
CE
CE
CE
= 30A, V
= 30A, V
= 20A, V
Test Conditions
Test Conditions
= 30A, V
= 400V, R
= 400V, R
= 30A, V
= 25V, V
PRELIMINARY TECHNICAL INFORMATION
GE
GE
GE
GE
CE
= 15V
= 15V
= 0V, Note 1
GE
= 15V, V
G
G
= 10V, Note 1
= 3Ω
= 3Ω
= 0V, f = 1MHz
J
J
4,835,592
4,881,106
= 25°C
= 125°C
CE
= 0.5 • V
4,931,844
5,017,508
5,034,796
T
J
CES
= 125°C
5,049,961
5,063,307
5,187,117
Min.
Min.
5,237,481
5,381,025
5,486,715
Characteristic Values
20
Characteristic Values
2120
6,162,665
6,259,123 B1
6,306,728 B1
Typ.
Typ.
0.33
0.23
0.37
0.57
0.21
420
1.80
1.65
50
77
32
30
60
38
19
28
92
95
16
19
25
CE
(Clamp), T
0.42 °C/W
0.42
100
0.90 °C/W
Max.
Max.
2.10
6,404,065 B1
6,534,343
6,583,505
J
°C/W
or R
mJ
mJ
mJ
mJ
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
ns
ns
ns
ns
S
V
V
G
.
6,683,344
6,710,405 B2 6,759,692
6,710,463
TO-247 AD Outline
IXGH48N60C3C1
Dim.
A
A
A
b
b
b
C
D
E
e
L
L1
∅P
Q
R
6,727,585
6,771,478 B2 7,071,537
1
2
1
2
20.80
15.75
19.81
Min.
1.65
2.87
5.20
3.55
5.89
4.32
4.7
2.2
2.2
1.0
Millimeter
.4
7,005,734 B2
7,063,975 B2
21.46
16.26
20.32
Max.
2.54
2.13
3.12
5.72
4.50
3.65
6.40
5.49
5.3
2.6
1.4
.8
e
0.205 0.225
0.232 0.252
∅ P
Min.
.185
.087
.059
.040
.065
.113
.016
.819
.610
.780
.140
.170
Inches
7,157,338B2
Max.
.209
.102
.098
.055
.084
.123
.031
.845
.640
.800
.177
.144
.216

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