IXGH48N60C3C1 IXYS, IXGH48N60C3C1 Datasheet - Page 3

• Manufacturer Part Number: IXGH48N60C3C1
• Description: IGBT C3 48A 600V TO-247
• Manufacturer: IXYS
• Series: GenX3SC™r

Specifications of IXGH48N60C3C1

• Igbt Type: PT
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.5V @ 15V, 30A
• Current - Collector (ic) (max): 75A
• Power - Max: 300W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247
• Vces, (v): 600
• Ic25, Tc=25°c, Igbt, (a): 75
• Ic90, Tc=90°c, Igbt, (a): -
• Ic110, Tc=110°c, Igbt, (a): 48
• Vce(sat), Max, Tj=25°c, Igbt, (v): 2.5
• Tfi, Typ, Tj=25°c, Igbt, (ns): 38
• Eoff, Typ, Tj=125°c, Igbt, (mj): 0.57
• Rthjc, Max, Igbt, (°c/w): 0.42
• If, Tj=110°c, Diode, (a): 20
• Rthjc, Max, Diode, (ºc/w): 0.9
• Package Style: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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60
50
40
30
20
10
5.0
4.5
4.0
3.5
3.0
2.5
2.0
60
50
40
30
20
10
0
0
0.0
0.0
7
0.4
0.4
8
Fig. 5. Collector-to-Emitter Voltage
0.8
Fig. 3. Output Characteristics
9
0.8
Fig. 1. Output Characteristics
vs. Gate-to-Emitter Voltage
I
C
= 60A
1.2
10
30A
15A
V
V
V
1.2
CE
CE
GE
@ 125ºC
- Volts
- Volts
@ 25ºC
- Volts
1.6
11
1.6
V
GE
2.0
12
V
= 15V
GE
13V
11V
= 15V
2.0
13V
11V
2.4
13
T
J
= 25ºC
7V
9V
2.4
2.8
14
9V
7V
3.2
2.8
15
300
250
200
150
100
100
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
50
90
80
70
60
50
40
30
20
10
0
0
5.0
25
0
5.5
2
V
GE
= 15V
Fig. 2. Extended Output Characteristics
6.0
50
4
Fig. 4. Dependence of V
6.5
13V
11V
9V
7V
6
Fig. 6. Input Admittance
Junction Temperature
T
J
- Degrees Centigrade
7.0
IXGH48N60C3C1
T
75
8
V
V
J
CE
GE
= 125ºC
@ 25ºC
- 40ºC
- Volts
- Volts
I
25ºC
I
C
7.5
10
I
C
= 15A
C
= 30A
= 60A
100
8.0
12
CE(sat)
8.5
14
on
V
GE
125
9.0
16
= 15V
9.5
18
10.0
150
20