IXGH48N60C3C1 IXYS, IXGH48N60C3C1 Datasheet - Page 4

• Manufacturer Part Number: IXGH48N60C3C1
• Description: IGBT C3 48A 600V TO-247
• Manufacturer: IXYS
• Series: GenX3SC™r

Specifications of IXGH48N60C3C1

• Igbt Type: PT
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.5V @ 15V, 30A
• Current - Collector (ic) (max): 75A
• Power - Max: 300W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247
• Vces, (v): 600
• Ic25, Tc=25°c, Igbt, (a): 75
• Ic90, Tc=90°c, Igbt, (a): -
• Ic110, Tc=110°c, Igbt, (a): 48
• Vce(sat), Max, Tj=25°c, Igbt, (v): 2.5
• Tfi, Typ, Tj=25°c, Igbt, (ns): 38
• Eoff, Typ, Tj=125°c, Igbt, (mj): 0.57
• Rthjc, Max, Igbt, (°c/w): 0.42
• If, Tj=110°c, Diode, (a): 20
• Rthjc, Max, Diode, (ºc/w): 0.9
• Package Style: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS Reserves the Right to Change Limits,Test Conditions, and Dimensions.
10,000
1,000
1.00
0.10
0.01
100
50
45
40
35
30
25
20
15
10
10
0.00001
5
0
0
0
f
10
= 1 MHz
5
20
30
10
Fig. 7. Transconductance
40
0.0001
Fig. 9. Capacitance
15
50
I
V
C
CE
- Amperes
60
20
- Volts
70
25
80
C ies
C oes
C res
Fig. 11. Maximum Transient Thermal Impedance
0.001
90
30
T
125ºC
J
= - 40ºC
25ºC
100
35
110
Pulse Width - Seconds
120
40
0.01
110
100
90
80
70
60
50
40
30
20
10
16
14
12
10
0
8
6
4
2
0
200
0
V
I
I
C
G
T
R
dV / dt < 10V / ns
CE
J
250
G
= 30A
= 10 mA
= 300V
= 125ºC
10
= 3Ω
Fig. 10. Reverse-Bias Safe Operating Area
300
20
0.1
350
Fig. 8. Gate Charge
Q
30
G
V
IXGH48N60C3C1
- NanoCoulombs
CE
400
- Volts
40
450
50
1
500
60
IXYS REF: G_48N60C3C1(5D)6-04-09
550
70
600
10
650
80