GT15J301(Q) Toshiba, GT15J301(Q) Datasheet

GT15J301(Q)

Manufacturer Part Number

GT15J301(Q)

Description

IGBT DUAL 600V 10A TO-3PN

Manufacturer

Toshiba

Datasheet

1.GT15J301Q.pdf (7 pages)

Specifications of GT15J301(Q)

Voltage - Collector Emitter Breakdown (max)

600V

Vce(on) (max) @ Vge, Ic

2.7V @ 15V, 15A

Current - Collector (ic) (max)

15A

Power - Max

35W

Input Type

Standard

Mounting Type

Through Hole

Package / Case

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Igbt Type

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HIGH POWER SWITCHING APPLICATIONS

MOTOR CONTROL APPLICATIONS

ABSOLUTE MAXIMUM RATINGS

EQUIVALENT CIRCUIT

Third-generation IGBT

Enhancement mode type

High speed

Low saturation voltage

FRD included between emitter and collector

Collector−Emitter Voltage

Gate−Emitter Voltage

Collector Current

Emitter−Collector Forward

Current

Collector Power Dissipation

(Tc = 25°C)

Junction Temperature

Storage Temperature Range

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report

and estimated failure rate, etc).

TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT

CHARACTERISTIC

: t

: V

1ms

CE (sat)

= 0.30μs (Max.) (I

SYMBOL

= 2.7V (Max.) (I

GT15J301

GES

CES

stg

(Ta = 25°C)

= 15A)

−55~150

RATING

600

±20

150

= 15A)

MARKING

15J301

UNIT

°C

Part No. (or abbreviation code)

Lot No.

A line indicates

lead (Pb)-free package or

lead (Pb)-free finish.

Weight: 1.7 g (typ.)

JEDEC

JEITA

TOSHIBA

2-10R1C

GT15J301

2006-10-31

⎯

Unit: mm

Related parts for GT15J301(Q)

GT15J301(Q) Summary of contents

Page 1

... Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). ...

Page 2

ELECTRICAL CHARACTERISTICS CHARACTERISTIC Gate Leakage Current Collector Cut−Off Current Gate−Emitter Cut-Off Voltage Collector−Emitter Saturation Voltage Input Capacitance Rise Time Turn−On Time Switching Time Fall Time Turn−Off Time Peak Forward Voltage Reverse Recovery Time Thermal Resistance (IGBT) Thermal Resistance (Diode) Note ...

Page 3

GT15J301 2006-10-31 ...

Page 4

GT15J301 2006-10-31 ...

Page 5

GT15J301 2006-10-31 ...

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GT15J301 2006-10-31 ...

Page 7

... The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • ...

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