GT25Q102(Q) Toshiba, GT25Q102(Q) Datasheet - Page 2

• Manufacturer Part Number: GT25Q102(Q)
• Description: IGBT 1200V 25A TO-3P LH
• Manufacturer: Toshiba

Specifications of GT25Q102(Q)

• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.7V @ 15V, 25A
• Current - Collector (ic) (max): 25A
• Power - Max: 200W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -

Electrical Characteristics
Gate leakage current
Collector cut-off current
Gate-emitter cut-off voltage
Collector-emitter saturation voltage
Input capacitance
Switching time
Thermal resistance
Note1: Switching time measurement circuit and input/output waveforms
Note2: Switching loss measurement waveforms
−V
0
0
GE
GT25Q301
Characteristic
V
V
I
GE
CE
C
R
G
I
Turn-on time
Turn-off time
C
Rise time
Fall time
90%
E
L
off
V
CE
V
(Ta = 25°C)
CC
V
V
Symbol
GE (OFF)
R
CE (sat)
I
I
C
th (j-c)
GES
CES
t
t
on
off
t
t
ies
r
f
10%
0
0
V
V
I
I
V
Inductive Load
V
V
C
C
GE
CE
CE
CC
GG
= 2.5 mA, V
= 25 A, V
V
V
= 1200 V, V
= 50 V, V
I
= ±20 V, V
= 600 V, I
= ±15 V, R
GE
E
CE
C
on
2
GE
t
Test Condition
10%
d (off)
GE
CE
10%
C
CE
= 15 V
G
GE
= 25 A
= 0, f = 1 MHz
= 5 V
= 43 Ω
⎯
= 0
90%
= 0
t
off
t
f
90%
10%
(Note1)
Min
10%
10%
4.0
t
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
d (on)
1360
Typ.
0.10
0.30
0.16
0.68
2.1
t
⎯
⎯
⎯
⎯
t
on
r
90%
GT25Q102
2006-11-01
0.625
±500
0.32
Max
1.0
7.0
2.7
⎯
⎯
⎯
10%
⎯
°C/W
Unit
mA
nA
pF
μs
V
V