GT60M323(Q) Toshiba, GT60M323(Q) Datasheet - Page 4

• Manufacturer Part Number: GT60M323(Q)
• Description: IGBT 900V DUAL 60A TO-3P LH
• Manufacturer: Toshiba

Specifications of GT60M323(Q)

• Voltage - Collector Emitter Breakdown (max): 900V
• Vce(on) (max) @ Vge, Ic: 2.8V @ 15V, 60A
• Current - Collector (ic) (max): 60A
• Power - Max: 200W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -

1000
0.01
200
150
100
100
0.1
50
10
10
0
1
1
0
1
1
Common emitter
V CC = 600 V
I C = 60 A
V GG =
Tc = 25°C
(continuous)
I C max (pulsed)*
I C max
operation
DC
Collector- emitter voltage V CE (V)
V CE = 150 V
±
50
t on
t off
Common emitter
R L = 2.5 Ω
Tc = 25°C
15 V
t r
t f
60
10
Gate resistance R G (
Gate charge Q G
Switching Time – R
Safe Operating Area
100
10
1 ms*
V
CE
10 ms
, V
100 µs*
*
120
100
GE
– Q
* Single non-repetitive
pulse Tc = 25°C
Curves must be derated
linearly with increase in
temperature.
100
10 µs*
G
(nC)
G
Ω
1000
180
)
10000
1000
240
20
15
10
5
0
4
10000
1000
1000
0.01
100
100
0.1
10
10
10
1
1
0
1
1
Common emitter
V CC = 600 V
R G = 51
V GG =
Tc = 25°C
t off
t on
t f
t r
10
Collector-emitter voltage V CE (V)
Collector-emitter voltage V CE (V)
±
Ω
15 V
10
10
Collector current I C (A)
20
Switching Time – I
Reverse Bias SOA
30
C – V
100
100
CE
40
C oes
C res
C ies
C
50
1000
1000
T j < = 125°C
V GG = 20 V
R G = 10 Ω
Common
emitter
V GE = 0
f = 1 MHz
Tc = 25°C
GT60M323
60
2006-11-01
10000
10000
70