BFT46,215 NXP Semiconductors, BFT46,215 Datasheet - Page 11

• Manufacturer Part Number: BFT46,215
• Description: FET N-CHAN 25V SOT-23
• Manufacturer: NXP Semiconductors

Specifications of BFT46,215

• Package / Case: TO-236-3, SC-59, SOT-23-3
• Current - Drain (idss) @ Vds (vgs=0): 200µA @ 10V
• Drain To Source Voltage (vdss): 25V
• Current Drain (id) - Max: 10mA
• Fet Type: N-Channel
• Voltage - Cutoff (vgs Off) @ Id: 1.2V @ 0.5nA
• Input Capacitance (ciss) @ Vds: 5pF @ 10V
• Mounting Type: Surface Mount
• Power - Max: 250mW
• Configuration: Single
• Mounting Style: SMD/SMT
• Transistor Polarity: N-Channel
• Drain Source Voltage Vds: 25 V
• Gate-source Cutoff Voltage: 1.2 V
• Gate-source Breakdown Voltage: - 25 V
• Maximum Drain Gate Voltage: 25 V
• Continuous Drain Current: 10 mA
• Drain Current (idss At Vgs=0): 0.2 mA to 1.5 mA
• Power Dissipation: 250 mW
• Maximum Operating Temperature: + 150 C
• Channel Type: N
• Gate-source Voltage (max): 25V
• Pin Count: 3
• Drain-gate Voltage (max): 25V
• Drain-source Volt (max): 25V
• Operating Temperature (min): -65C
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Package Type: TO-236AB
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 933410720215; BFT46 T/R; BFT46 T/R

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NXP Semiconductors
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimers. No changes were made to the technical content, except for package outline
drawings which were updated to the latest version.
Contact information
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R77/02/pp11
Date of release: December 1997