BFT46,215 NXP Semiconductors, BFT46,215 Datasheet - Page 2

FET N-CHAN 25V SOT-23

BFT46,215

Manufacturer Part Number
BFT46,215
Description
FET N-CHAN 25V SOT-23
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BFT46,215

Package / Case
TO-236-3, SC-59, SOT-23-3
Current - Drain (idss) @ Vds (vgs=0)
200µA @ 10V
Drain To Source Voltage (vdss)
25V
Current Drain (id) - Max
10mA
Fet Type
N-Channel
Voltage - Cutoff (vgs Off) @ Id
1.2V @ 0.5nA
Input Capacitance (ciss) @ Vds
5pF @ 10V
Mounting Type
Surface Mount
Power - Max
250mW
Configuration
Single
Mounting Style
SMD/SMT
Transistor Polarity
N-Channel
Drain Source Voltage Vds
25 V
Gate-source Cutoff Voltage
1.2 V
Gate-source Breakdown Voltage
- 25 V
Maximum Drain Gate Voltage
25 V
Continuous Drain Current
10 mA
Drain Current (idss At Vgs=0)
0.2 mA to 1.5 mA
Power Dissipation
250 mW
Maximum Operating Temperature
+ 150 C
Channel Type
N
Gate-source Voltage (max)
25V
Pin Count
3
Drain-gate Voltage (max)
25V
Drain-source Volt (max)
25V
Operating Temperature (min)
-65C
Operating Temperature (max)
150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Package Type
TO-236AB
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
933410720215
BFT46 T/R
BFT46 T/R
NXP Semiconductors
DESCRIPTION
Symmetrical n-channel silicon
epitaxial planar junction field-effect
transistor in a microminiature plastic
envelope. The transistor is intended
for low level general purpose
amplifiers in thick and thin-film
circuits.
PINNING
Note : Drain and source are
interchangeable.
QUICK REFERENCE DATA
December 1997
1 = drain
2 = source
3 = gate
Drain-source voltage
Gate-source voltage (open drain)
Total power dissipation up to T
Drain current
Transfer admittance (common source)
Equivalent noise voltage
N-channel silicon FET
V
I
V
D
DS
DS
= 0,2 mA; V
= 10 V; V
= 10 V; I
D
GS
DS
= 200 A; B = 0,6 to 100 Hz
= 0
= 10 V; f = 1 kHz
amb
= 40 C
Marking code
BFT46 = M3p
handbook, halfpage
Fig.1 Simplified outline and symbol, SOT23.
2
Top view
1
3
V
V
P
I
 y
V
2
DSS
tot
n
fs
DS
GSO
g
MAM385
Product specification
d
s
max.
max.
max.
250 mW
BFT46
0,2 mA
1,5 mA
0,5 mS
0,5 V
25 V
25 V

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