BFT46,215 NXP Semiconductors, BFT46,215 Datasheet - Page 5

FET N-CHAN 25V SOT-23

BFT46,215

Manufacturer Part Number
BFT46,215
Description
FET N-CHAN 25V SOT-23
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BFT46,215

Package / Case
TO-236-3, SC-59, SOT-23-3
Current - Drain (idss) @ Vds (vgs=0)
200µA @ 10V
Drain To Source Voltage (vdss)
25V
Current Drain (id) - Max
10mA
Fet Type
N-Channel
Voltage - Cutoff (vgs Off) @ Id
1.2V @ 0.5nA
Input Capacitance (ciss) @ Vds
5pF @ 10V
Mounting Type
Surface Mount
Power - Max
250mW
Configuration
Single
Mounting Style
SMD/SMT
Transistor Polarity
N-Channel
Drain Source Voltage Vds
25 V
Gate-source Cutoff Voltage
1.2 V
Gate-source Breakdown Voltage
- 25 V
Maximum Drain Gate Voltage
25 V
Continuous Drain Current
10 mA
Drain Current (idss At Vgs=0)
0.2 mA to 1.5 mA
Power Dissipation
250 mW
Maximum Operating Temperature
+ 150 C
Channel Type
N
Gate-source Voltage (max)
25V
Pin Count
3
Drain-gate Voltage (max)
25V
Drain-source Volt (max)
25V
Operating Temperature (min)
-65C
Operating Temperature (max)
150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Package Type
TO-236AB
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
933410720215
BFT46 T/R
BFT46 T/R
NXP Semiconductors
December 1997
handbook, halfpage
N-channel silicon FET
Fig.6
(mS)
(mA)
0.75
0.25
|y fs |
I D
0.5
1
0
3
2
1
0
0
0
 y
T
Fig.4 Typical values. V
amb
fs
 versus I
= 25 C.
0.25
50
typ
D
. V
DS
= 10 V; f = 1 kHz;
100
0.5
DS
− V GS = 0 V
= 10 V.
I D (mA)
T j (°C)
MDA273
0.1 V
0.2 V
0.3 V
MDA269
0.75
150
5
ID = 0.5 nA
handbook, halfpage
handbook, halfpage
−V (P)GS
(V) at
Fig.5
Fig.7
(mS)
|y os |
1.25
0.75
0.25
0.5
1
5
4
3
2
1
0
0
0
Correlation between V
V
y
T
amb
DS
os
 versus I
= 10 V; T
= 25 C.
0.25
0.5
j
typ
typ
= 25 C.
D
. V
I DSS (mA) at V GS = 0
DS
= 10 V; f = 1 kHz;
0.5
(P)GS
1
Product specification
I D (mA)
and I
MDA274
MDA270
BFT46
DSS
0.75
1.5
.

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