SI7900AEDN-T1-E3 Vishay, SI7900AEDN-T1-E3 Datasheet - Page 11

• Manufacturer Part Number: SI7900AEDN-T1-E3
• Description: MOSFET DUAL N-CH 20V 1212-8
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI7900AEDN-T1-E3

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 26 mOhm @ 8.5A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 6A
• Vgs(th) (max) @ Id: 900mV @ 250µA
• Gate Charge (qg) @ Vgs: 16nC @ 4.5V
• Power - Max: 1.5W
• Mounting Type: Surface Mount
• Package / Case: PowerPAK® 1212-8 Dual
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 8.5A
• Drain Source Voltage Vds: 20V
• On Resistance Rds(on): 36mohm
• Rds(on) Test Voltage Vgs: 12V
• Threshold Voltage Vgs Typ: 900mV
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SI7900AEDN-T1-E3TR

RECOMMENDED MINIMUM PADS FOR PowerPAK
Document Number: 72597
Revision: 21-Jan-08
Return to Index
Return to Index
(0.405)
(0.660)
0.016
0.026
(0.990)
0.039
(0.635)
0.025
Recommended Minimum Pads
Dimensions in Inches/(mm)
®
(3.860)
1212-8 Single
0.152
(1.725)
0.068
(0.760)
0.030
Application Note 826
(0.255)
0.010
Vishay Siliconix
www.vishay.com
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