SI7900AEDN-T1-E3 Vishay, SI7900AEDN-T1-E3 Datasheet - Page 3

• Manufacturer Part Number: SI7900AEDN-T1-E3
• Description: MOSFET DUAL N-CH 20V 1212-8
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI7900AEDN-T1-E3

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 26 mOhm @ 8.5A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 6A
• Vgs(th) (max) @ Id: 900mV @ 250µA
• Gate Charge (qg) @ Vgs: 16nC @ 4.5V
• Power - Max: 1.5W
• Mounting Type: Surface Mount
• Package / Case: PowerPAK® 1212-8 Dual
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 8.5A
• Drain Source Voltage Vds: 20V
• On Resistance Rds(on): 36mohm
• Rds(on) Test Voltage Vgs: 12V
• Threshold Voltage Vgs Typ: 900mV
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SI7900AEDN-T1-E3TR

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 72287
S-81544-Rev. C, 07-Jul-08
0.06
0.05
0.04
0.03
0.02
0.01
1.6
1.4
1.2
1.0
0.8
0.6
30
25
20
15
10
- 50
5
0
0
0
On-Resistance vs. Junction Temperature
- 25
V
I
D
GS
= 8.5 A
On-Resistance vs. Drain Current
5
= 4.5 V
V
1
GS
V
T
0
V
DS
J
Output Characteristics
GS
= 5 thru 2 V
- Junction Temperature (°C)
- Drain-to-Source Voltage (V)
= 1.8 V
10
I
D
25
- Drain Current (A)
2
50
15
75
3
20
100
V
V
GS
GS
1.5 V
4
25
= 2.5 V
= 4.5 V
125
150
30
5
0.1
20
10
30
25
20
15
10
1
5
0
5
4
3
2
1
0
0.0
0
0
Source-Drain Diode Forward Voltage
V
I
D
T
DS
J
= 6.5 A
2
0.5
0.3
= 150 °C
= 10 V
V
V
SD
GS
Transfer Characteristics
Q
- Source-to-Drain Voltage (V)
- Gate-to-Source Voltage (V)
g
4
- Total Gate Charge (nC)
Gate Charge
1.0
0.6
T
C
25 °C
= - 55 °C
Vishay Siliconix
6
Si7900AEDN
1.5
0.9
T
J
= 25 °C
8
www.vishay.com
125 °C
2.0
1.2
10
1.5
2.5
12
3