SI7900AEDN-T1-E3 Vishay, SI7900AEDN-T1-E3 Datasheet - Page 4

• Manufacturer Part Number: SI7900AEDN-T1-E3
• Description: MOSFET DUAL N-CH 20V 1212-8
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI7900AEDN-T1-E3

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 26 mOhm @ 8.5A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 6A
• Vgs(th) (max) @ Id: 900mV @ 250µA
• Gate Charge (qg) @ Vgs: 16nC @ 4.5V
• Power - Max: 1.5W
• Mounting Type: Surface Mount
• Package / Case: PowerPAK® 1212-8 Dual
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 8.5A
• Drain Source Voltage Vds: 20V
• On Resistance Rds(on): 36mohm
• Rds(on) Test Voltage Vgs: 12V
• Threshold Voltage Vgs Typ: 900mV
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SI7900AEDN-T1-E3TR

Si7900AEDN
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
0.01
200
160
120
0.1
0.05
0.04
0.03
0.02
0.01
0.00
80
40
2
1
0
10
0.001
-4
0
Single Pulse Power, Junction-to-Ambient
On-Resistance vs. Gate-to-Source Voltage
0.02
0.05
Duty Cycle = 0.5
0.2
0.1
1
Single Pulse
V
0.01
GS
- Gate-to-Source Voltage (V)
10
2
-3
Time (s)
0.1
3
I
Normalized Thermal Transient Impedance, Junction-to-Ambient
D
= 8.5 A
4
10
-2
1
5
Square Wave Pulse Duration (s)
10
6
10
-1
- 0.2
- 0.4
- 0.6
0.01
100
0.4
0.2
0.0
0.1
10
1
1
0.1
- 50
Limited by R
* V
GS
Safe Operating Area, Junction-to-Case
- 25
> minimum V
V
DS
0
DS(on)
- Drain-to-Source Voltage (V)
Single Pulse
T
C
I
T
Threshold Voltage
D
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
10
1
J
= 25 °C
Notes:
= 250 µA
P
*
25
- Temperature (°C)
DM
GS
JM
- T
at which R
A
t
50
1
= P
S-81544-Rev. C, 07-Jul-08
Document Number: 72287
t
2
DM
Z
75
thJA
DS(on)
10
100
(t)
t
t
thJA
1
2
100
is specified
=
115 °C/W
1 ms
10 ms
100 ms
1 s
10 s
DC
125
600
100
150