PMGD780SN,115 NXP Semiconductors, PMGD780SN,115 Datasheet - Page 8

• Manufacturer Part Number: PMGD780SN,115
• Description: MOSFET N-CH TRENCH DL 60V SOT363
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of PMGD780SN,115

• Package / Case: SC-70-6, SC-88, SOT-363
• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 920 mOhm @ 300mA, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 490mA
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 1.05nC @ 10V
• Input Capacitance (ciss) @ Vds: 23pF @ 30V
• Power - Max: 410mW
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Dual
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.92 Ohm @ 10 V
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 0.49 A
• Power Dissipation: 410 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-2369-2; 934057709115; PMGD780SN T/R

NXP Semiconductors
PMGD780SN_2
Product data sheet
Fig 12. Source current as a function of source-drain
(A)
I
S
0.8
0.6
0.4
0.2
1
0
T
voltage; typical values
0
V
j
= 25 °C and 150 °C; V
GS
= 0 V
0.3
150 °C
0.6
GS
= 0 V
0.9
T
j
= 25 °C
All information provided in this document is subject to legal disclaimers.
V
SD
03an91
(V)
1.2
Rev. 02 — 19 April 2010
Fig 13. Gate-source voltage as a function of gate
Dual N-channel μTrenchMOS standard level FET
V
(V)
GS
10
8
6
4
2
0
I
charge; typical values
0
D
I
T
V
D
= 1 A; V
j
DS
= 1 A
= 25 °C
= 30 V
0.3
DD
= 30 V
0.6
PMGD780SN
0.9
© NXP B.V. 2010. All rights reserved.
Q
G
03an93
(nC)
1.2
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