TPCF8402(TE85L) Toshiba, TPCF8402(TE85L) Datasheet - Page 6

• Manufacturer Part Number: TPCF8402(TE85L)
• Description: MOSFET N/P-CH 30V 3.2A VS-8
• Manufacturer: Toshiba

Specifications of TPCF8402(TE85L)

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 50 mOhm @ 2A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 4A, 3.2A
• Vgs(th) (max) @ Id: 2V @ 1mA
• Gate Charge (qg) @ Vgs: 10nC @ 10V
• Input Capacitance (ciss) @ Vds: 470pF @ 10V
• Power - Max: 530mW
• Mounting Type: Surface Mount
• Package / Case: VS-8 (2-3U1B)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: TPCF8402TR

P-channel
1000
120
150
100
2.0
1.6
1.2
0.8
0.4
90
60
30
10
−80
0
-0.1
0
0
Common source
V GS = 0 V
f = 1 MHz
Ta = 25°C
(1)
(2)
(3)
(4)
V GS = -4.5V
−40
Drain-source voltage V DS (V)
40
Ambient temperature Ta (°C)
Ambient temperature Ta (°C)
I D = -0.8A, -1.6A, -3.2A
V GS = -10V
Capacitance – V
Device mounted on a glass-epoxy board (a) (Note 2a)
(1)Single-device operation (Note 3a)
(2)Single-device value at dual operation (Note 3b)
Device mounted on a glass-epoxy board (b) (Note 2b)
(3)Single-device operation (Note 3a)
(4)Single-device value at dual operation (Note 3b)
ｔ＝5s
0
-1
R
80
DS (ON)
P
D
40
-3 -5
– Ta
I D = -0.8A, -1.6A, -3.2A
– Ta
120
C iss
-10
80
C rss
DS
Common source
Pulse test
C oss
160
120
-30 -50 -100
160
200
6
-2.0
-1.5
-1.0
-0.5
-30
-15
-10
0.5
0.3
0.1
-25
-20
10
-5
5
3
1
−80
0
0
0
0
-6
-12
Common source
V DS = -10 V
I D = -1mA
Pulse test
V DS
V DD = -24V
-10
−40
0.3
Drain-source voltage V DS (V)
Ambient temperature Ta (°C)
Total gate charge Q g (nC)
4
-5.0
Dynamic input/output
-3.0
0
characteristics
0.6
I
DR
V
th
-1.0
-24
V DD = -6V
– V
40
8
– Ta
DS
0.9
-12
V GS = 0 V
Common source
Ta = 25°C
Pulse test
80
12
Common
source
I D = -3.2 A
Ta = 25°C
Pulse test
1.2
120
V GS
TPCF8402
2009-12-10
1.5
160
16
-15
-10
-5
0