TPCF8402(TE85L) Toshiba, TPCF8402(TE85L) Datasheet - Page 7

• Manufacturer Part Number: TPCF8402(TE85L)
• Description: MOSFET N/P-CH 30V 3.2A VS-8
• Manufacturer: Toshiba

Specifications of TPCF8402(TE85L)

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 50 mOhm @ 2A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 4A, 3.2A
• Vgs(th) (max) @ Id: 2V @ 1mA
• Gate Charge (qg) @ Vgs: 10nC @ 10V
• Input Capacitance (ciss) @ Vds: 470pF @ 10V
• Power - Max: 530mW
• Mounting Type: Surface Mount
• Package / Case: VS-8 (2-3U1B)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: TPCF8402TR

P-channel
-100
-0.1
-10
-1
-0.1
* Single pulse
Curves must be derated linearly with
increase in temperature.
Ta = 25°C
I D max (pulsed) *
Drain-source voltage V DS (V)
Safe operating area
1000
100
-1
10
0.001
10 ms *
1
Single pulse
1 ms *
0.01
V DSS
-10
max
0.1
-100
Pulse width t w (s)
r
7
th
– t
1
w
(4)
Device mounted on a glass-epoxy board (a) (Note 2a)
(1) Single-device operation (Note 3a)
(2) Single-device value at dual operation (Note 3b)
Device mounted on a glass-epoxy board (b) (Note 2b)
(3) Single-device operation (Note 3a)
(4) Single-device value at dual operation (Note 3b)
10
100
(2)
(3)
(1)
1000
TPCF8402
2009-12-10