TPCF8402(TE85L) Toshiba, TPCF8402(TE85L) Datasheet - Page 7
![MOSFET N/P-CH 30V 3.2A VS-8](/photos/5/45/54551/tpcf8402_te85l__sml.jpg)
TPCF8402(TE85L)
Manufacturer Part Number
TPCF8402(TE85L)
Description
MOSFET N/P-CH 30V 3.2A VS-8
Manufacturer
Toshiba
Datasheet
1.TPCF8402TE85LFM.pdf
(11 pages)
Specifications of TPCF8402(TE85L)
Fet Type
N and P-Channel
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
50 mOhm @ 2A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
4A, 3.2A
Vgs(th) (max) @ Id
2V @ 1mA
Gate Charge (qg) @ Vgs
10nC @ 10V
Input Capacitance (ciss) @ Vds
470pF @ 10V
Power - Max
530mW
Mounting Type
Surface Mount
Package / Case
VS-8 (2-3U1B)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
TPCF8402TR
P-channel
-100
-0.1
-10
-1
-0.1
* Single pulse
Curves must be derated linearly with
increase in temperature.
Ta = 25°C
I D max (pulsed) *
Drain-source voltage V DS (V)
Safe operating area
1000
100
-1
10
0.001
10 ms *
1
Single pulse
1 ms *
0.01
V DSS
-10
max
0.1
-100
Pulse width t w (s)
r
7
th
– t
1
w
(4)
Device mounted on a glass-epoxy board (a) (Note 2a)
(1) Single-device operation (Note 3a)
(2) Single-device value at dual operation (Note 3b)
Device mounted on a glass-epoxy board (b) (Note 2b)
(3) Single-device operation (Note 3a)
(4) Single-device value at dual operation (Note 3b)
10
100
(2)
(3)
(1)
1000
TPCF8402
2009-12-10