FDD13AN06A0 Fairchild Semiconductor, FDD13AN06A0 Datasheet

MOSFET N-CH 60V 50A D-PAK

FDD13AN06A0

Manufacturer Part Number
FDD13AN06A0
Description
MOSFET N-CH 60V 50A D-PAK
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet

Specifications of FDD13AN06A0

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
13.5 mOhm @ 50A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
50A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
29nC @ 10V
Input Capacitance (ciss) @ Vds
1350pF @ 25V
Power - Max
115W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.0135 Ohm @ 10 V
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
9.9 A
Power Dissipation
115000 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Continuous Drain Current Id
9.9A
Drain Source Voltage Vds
60V
On Resistance Rds(on)
11.5mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
4V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDD13AN06A0
FDD13AN06A0TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDD13AN06A0
Manufacturer:
FAIRCHILD
Quantity:
10 518
Part Number:
FDD13AN06A0
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Company:
Part Number:
FDD13AN06A0
Quantity:
51
Part Number:
FDD13AN06A0-F085
0
©2003 Fairchild Semiconductor Corporation
FDD13AN06A0
N-Channel PowerTrench
60V, 50A, 13.5m
Features
• r
• Q
• Low Miller Charge
• Low Q
• UIS Capability (Single Pulse and Repetitive Pulse)
• Qualified to AEC Q101
Formerly developmental type 82555
MOSFET Maximum Ratings
Thermal Characteristics
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a
V
V
I
E
P
T
R
R
R
D
GS
J
DSS
AS
D
Symbol
, T
JC
JA
JA
All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems
DS(ON)
g
(tot) = 22nC (Typ.), V
STG
RR
= 11.5m (Typ.), V
Body Diode
Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html.
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (T
Continuous (T
Pulsed
Single Pulse Avalanche Energy ( Note 1)
Power dissipation
Derate above 25
Operating and Storage Temperature
Thermal Resistance Junction to Case TO-252
Thermal Resistance Junction to Ambient TO-252
Thermal Resistance Junction to Ambient TO-252, 1in
SOURCE
GATE
TO-252AA
FDD SERIES
GS
copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/
A
C
GS
= 10V
= 25
< 80
o
= 10V, I
C
o
o
C, V
C, V
(FLANGE)
®
DRAIN
D
GS
GS
= 50A
MOSFET
= 10V, R
= 10V)
Parameter
T
C
= 25°C unless otherwise noted
JA
certification.
= 52
o
C/W)
Applications
• Motor / Body Load Control
• ABS Systems
• Powertrain Management
• Injection Systems
• DC-DC converters and Off-line UPS
• Distributed Power Architectures and VRMs
• Primary Switch for 12V and 24V systems
2
copper pad area
G
D
S
-55 to 175
Ratings
Figure 4
0.77
115
100
9.9
1.3
60
50
56
52
20
July 2003
FDD13AN06A0 Rev. A1
Units
W/
o
o
o
C/W
C/W
C/W
mJ
o
W
V
V
A
A
A
C
o
C

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FDD13AN06A0 Summary of contents

Page 1

... Distributed Power Architectures and VRMs • Primary Switch for 12V and 24V systems DRAIN (FLANGE 25°C unless otherwise noted C Parameter 10V 10V C/ copper pad area certification. July 2003 Ratings Units 9.9 A Figure 115 -55 to 175 C o 1.3 C/W o 100 C C/W FDD13AN06A0 Rev. A1 ...

Page 2

... 10V 50A 25A 50A, dI /dt = 100A 50A, dI /dt = 100A Tape Width Quantity 16mm 2500 units Min Typ Max 150 250 100 0.0115 0.0135 - 0.022 0.034 - 0.026 0.030 - 1350 - - 260 - - 2.6 3.4 = 30V DD = 50A - 8 1.0mA - 5 6 130 - 1. 1 FDD13AN06A0 Rev. A1 Units ...

Page 3

... Figure 2. Maximum Continuous Drain Current RECTANGULAR PULSE DURATION ( PULSE WIDTH (s) Figure 4. Peak Current Capability CURRENT LIMITED BY PACKAGE 50 75 100 125 150 CASE TEMPERATURE ( C) C Case Temperature NOTES: DUTY FACTOR PEAK FOR TEMPERATURES o ABOVE 25 C DERATE PEAK CURRENT AS FOLLOWS: 175 - 150 - FDD13AN06A0 Rev. A1 175 ...

Page 4

... AV AS DSS (L/R)ln[(I *R)/(1.3*RATED DSS o STARTING STARTING T = 150 TIME IN AVALANCHE (ms) AV Capability 20V = 10V PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX 0.5 1.0 1 DRAIN TO SOURCE VOLTAGE ( 10V - 120 160 JUNCTION TEMPERATURE ( C) J FDD13AN06A0 Rev +1] DD 100 = 6V 2.0 =50A 200 ...

Page 5

... D D 1.1 1.0 0.9 120 160 200 - Figure 12. Normalized Drain to Source Breakdown Voltage vs Junction Temperature ISS Figure 14. Gate Charge Waveforms for Constant = 250 A - 120 160 JUNCTION TEMPERATURE ( 30V WAVEFORMS IN DESCENDING ORDER 50A 25A GATE CHARGE (nC) g Gate Current FDD13AN06A0 Rev. A1 200 25 ...

Page 6

... Figure 19. Switching Time Test Circuit ©2003 Fairchild Semiconductor Corporation DUT 0.01 Figure 16. Unclamped Energy Waveforms gs2 DUT g(REF) 0 Figure 18. Gate Charge Waveforms d(ON 90 DUT V GS 50% 10% 0 Figure 20. Switching Time Waveforms BV DSS g(TOT g(TH OFF t d(OFF 10% 10% 90% 50% PULSE WIDTH FDD13AN06A0 Rev 10V 90% ...

Page 7

... C/ never exceeded (EQ 0.01 (0.0645 Figure 21. Thermal Resistance vs Mounting dissipation. Pulse (EQ. 2) Area in Inches Squared (EQ. 3) Area in Centimeters Squared R = 33.32+ 23.84/(0.268+Area) EQ 33.32+ 154/(1.73+Area) EQ (0.645) (6.45) (64. AREA, TOP COPPER AREA in (cm ) Pad Area FDD13AN06A0 Rev. A1 ...

Page 8

... PSPICE Electrical Model .SUBCKT FDD13AN06A0 rev August 2002 5.1e- 5.8e-10 Cin 6 8 1.3e-9 Dbody 7 5 DbodyMOD Dbreak 5 11 DbreakMOD Dplcap 10 5 DplcapMOD Ebreak 65.40 Eds Egs Esg Evthres Evtemp GATE Lgate 1 9 5.2e-9 Ldrain 2 5 1.0e-9 Lsource 3 7 2.14e-9 RLgate RLdrain RLsource ...

Page 9

... Fairchild Semiconductor Corporation DPLCAP 10 RSLC2 - 6 ESG 8 EVTHRES + + 19 LGATE EVTEMP 8 RGATE + RLGATE CIN S1A S2A S1B S2B EGS EDS LDRAIN 5 RLDRAIN RSLC1 51 ISCL DBREAK 50 RDRAIN 11 DBODY MWEAK EBREAK MMED + MSTRO 17 18 LSOURCE - 8 7 RSOURCE RLSOURCE RBREAK 17 18 RVTEMP VBAT RVTHRES FDD13AN06A0 Rev. A1 DRAIN 2 SOURCE 3 ...

Page 10

... RTHERM1 TH 6 5.24e-2 RTHERM2 6 5 10.08e-2 RTHERM3 5 4 4.28e-1 RTHERM4 4 3 1.8e-1 RTHERM5 3 2 1.9e-1 RTHERM6 2 TL 2.1e-1 SABER Thermal Model SABER thermal model FDD13AN06A0T template thermal_model th tl thermal_c th ctherm.ctherm1 th 6 =9.7e-4 ctherm.ctherm2 6 5 =6.2e-3 ctherm.ctherm3 5 4 =4.6e-3 ctherm.ctherm4 4 3 =4.9e-3 ctherm ...

Page 11

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet Series™ Bottomless™ FAST CoolFET™ FASTr™ CROSSVOLT™ ...

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