QS5U13TR Rohm Semiconductor, QS5U13TR Datasheet

MOSFET N-CH 30V 2A TSMT5

QS5U13TR

Manufacturer Part Number
QS5U13TR
Description
MOSFET N-CH 30V 2A TSMT5
Manufacturer
Rohm Semiconductor
Datasheet

Specifications of QS5U13TR

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Diode (Isolated)
Rds On (max) @ Id, Vgs
100 mOhm @ 2A, 4.5V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
2A
Vgs(th) (max) @ Id
1.5V @ 1mA
Gate Charge (qg) @ Vgs
3.9nC @ 4.5V
Input Capacitance (ciss) @ Vds
175pF @ 10V
Power - Max
900mW
Mounting Type
Surface Mount
Package / Case
TSMT5
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.1 Ohm @ 4.5 V
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
12 V
Continuous Drain Current
2 A
Power Dissipation
1250 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 50 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Transistors
2.5V Drive Nch+SBD MOS FET
QS5U13
Silicon N-channel MOSFET
Schottky Barrier DIODE
1) The QS5U13 combines Nch MOSFET with a
2) Low on-state resistance with fast switching.
3) Low voltage drive (2.5V).
4) The Independently connected Schottky barrier diode
Load switch, DC / DC conversion
Type
QS5U13
Applications
Structure
Features
Packaging specifications
Schottky barrier diode in a single TSMT5 package.
has low forward voltage.
Package
Code
Basic ordering unit (pieces)
Taping
3000
TR
External dimensions (Unit : mm)
Equivalent circuit
TSMT5
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
(1)
Abbreviated symbol : U13
0.95
(5)
(2)
2.9
1.9
0.4
(5)
(1)
0.95
(4)
(3)
∗2
Each lead has same dimensions
(2)
1.0MAX
0.16
0.85
0.7
Rev.A
∗1
0 ~ 0.1
(4)
(3)
QS5U13
(1) Anode
(2) Source
(3) Gate
(4) Drain
(5) Cathode
1/4

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QS5U13TR Summary of contents

Page 1

Transistors 2.5V Drive Nch+SBD MOS FET QS5U13 Structure Silicon N-channel MOSFET Schottky Barrier DIODE Features 1) The QS5U13 combines Nch MOSFET with a Schottky barrier diode in a single TSMT5 package. 2) Low on-state resistance with fast switching. 3) Low ...

Page 2

Transistors Absolute maximum ratings (Ta=25°C) <MOSFET> Parameter Drain-source voltage Gate-source voltage Continuous Drain current Pulsed Continuous Source current (Body diode) Pulsed Channel temperature Power dissipation <Di> Repetitive peak reverse voltage Reverse voltage Forward current Forward current surge peak Junction temperature ...

Page 3

Transistors Electrical characteristic curves <MOSFET> 10 =10V V DS Pulsed 1 Ta=125°C Ta=75°C Ta=25°C Ta= −25°C 0.1 0.01 0.001 0.0 0.5 1.0 1.5 2.0 2.5 GATE-SOURCE VOLTAGE : V (V) GS Fig.1 Typical Transfer Characteristics 1000 =2. Pulsed ...

Page 4

Transistors 6 Ta=25°C =15V =10Ω Pulsed TOTAL GATE CHARGE : Qg (nC) Fig.10 Dynamic Input Characteristics Measurement circuits D.U.T. ...

Page 5

Appendix No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product ...

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