QS5U13TR Rohm Semiconductor, QS5U13TR Datasheet - Page 3

• Manufacturer Part Number: QS5U13TR
• Description: MOSFET N-CH 30V 2A TSMT5
• Manufacturer: Rohm Semiconductor

Specifications of QS5U13TR

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Diode (Isolated)
• Rds On (max) @ Id, Vgs: 100 mOhm @ 2A, 4.5V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 2A
• Vgs(th) (max) @ Id: 1.5V @ 1mA
• Gate Charge (qg) @ Vgs: 3.9nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 175pF @ 10V
• Power - Max: 900mW
• Mounting Type: Surface Mount
• Package / Case: TSMT5
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.1 Ohm @ 4.5 V
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 12 V
• Continuous Drain Current: 2 A
• Power Dissipation: 1250 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 50 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Transistors
<MOSFET>
Electrical characteristic curves
0.001
1000
0.01
0.01
100
0.1
0.1
10
10
Fig.4 Static Drain-Source On-State
10
1
0.1
1
0.0
Fig.1 Typical Transfer Characteristics
0.0
Fig.7 Reverse Drain Current
SOURCE-DRAIN VOLTAGE : V
GATE-SOURCE VOLTAGE : V
Ta=125°C
Ta=75°C
Ta=25°C
Ta= −25°C
Resistance vs. Drain Current
Ta=125°C
Ta=75°C
Ta=25°C
Ta= −25°C
Ta=125°C
Ta=75°C
Ta=25°C
Ta= −25°C
0.5
DRAIN CURRENT : I
vs. Source-Drain Current
0.5
1.0
1
1.5
1.0
D
V
Pulsed
V
Pulsed
2.0
(A)
GS
DS
V
Pulsed
GS
=2.5V
=10V
GS
SD
=0V
(V)
(V)
2.5
10
1.5
300
200
100
1000
1000
100
100
Fig.2 Static Drain-Source On-State
0
10
10
0
0.1
0.01
Fig.5 Static Drain-Source
I
D
Fig.8 Typical Capacitance
=1A
GATE-SOURCE VOLTAGE : V
1
DRAIN-SOURCE VOLTAGE : V
Resistance vs. Drain Current
Ta=125°C
Ta=75°C
Ta=25°C
Ta= −25°C
2
On-State Resistance vs.
Gate-Source Voltage
DRAIN CURRENT : I
vs. Drain-Source Voltage
0.1
3
I
D
=2A
4
5
1
1
6
7
D
Ta=25°C
Pulsed
10
V
Pulsed
8
(A)
Ta=25°C
f=1MHz
V
GS
GS
GS
=4.5V
DS
9
=0V
(V)
C
C
C
(V)
10
oss
rss
iss
10
100
1000
1000
100
100
1000
Fig.3 Static Drain-Source On-State
10
10
Fig.6 Static Drain-Source On-State
100
0.1
10
0.1
1
0.01
Fig.9 Switching Characteristics
t
Ta=125°C
Ta=75°C
Ta=25°C
Ta= −25°C
Resistance vs. Drain Current
d (off)
Resistance vs. Drain Current
DRAIN CURRENT : I
DRAIN CURRENT : I
DRAIN CURRENT : I
t
t
d (on)
0.1
f
t
Rev.A
r
V
V
V
GS
GS
GS
1
1
=2.5V
=4V
=4.5V
QS5U13
1
D
D
V
Pulsed
Ta=25°C
Pulsed
D
(A)
(A)
GS
Ta=25°C
V
V
R
Pulsed
(A)
DD
GS
G
=4.0V
=10Ω
=15V
=4.5V
3/4
10
10
10