QS5U13TR Rohm Semiconductor, QS5U13TR Datasheet - Page 2

MOSFET N-CH 30V 2A TSMT5

QS5U13TR

Manufacturer Part Number

QS5U13TR

Description

MOSFET N-CH 30V 2A TSMT5

Manufacturer

Rohm Semiconductor

Datasheet

1.QS5U13TR.pdf (5 pages)

Specifications of QS5U13TR

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Diode (Isolated)

Rds On (max) @ Id, Vgs

100 mOhm @ 2A, 4.5V

Drain To Source Voltage (vdss)

30V

Current - Continuous Drain (id) @ 25° C

2A

Vgs(th) (max) @ Id

1.5V @ 1mA

Gate Charge (qg) @ Vgs

3.9nC @ 4.5V

Input Capacitance (ciss) @ Vds

175pF @ 10V

Power - Max

900mW

Mounting Type

Surface Mount

Package / Case

TSMT5

Configuration

Single

Transistor Polarity

N-Channel

Resistance Drain-source Rds (on)

0.1 Ohm @ 4.5 V

Drain-source Breakdown Voltage

30 V

Gate-source Breakdown Voltage

12 V

Continuous Drain Current

2 A

Power Dissipation

1250 mW

Maximum Operating Temperature

+ 150 C

Mounting Style

SMD/SMT

Minimum Operating Temperature

- 50 C

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

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Transistors

∗Pulsed

<MOSFET>

Drain-source voltage

Gate-source voltage

Drain current

Channel temperature

Power dissipation

<Di>

Repetitive peak reverse voltage

Reverse voltage

Forward current

Forward current surge peak

Junction temperature

Power dissipation

<MOSFET AND Di>

Total power dissipation

Range of Storage temperature

Source current

(Body diode)

∗1 Pw≤10µs, Duty cycle≤1% ∗2 60Hz

<MOSFET>

<Body diode (source-drain)>

<Di>

Forward voltage

Reverse current

Gate-source leakage

Drain-source breakdown voltage

Zero gate voltage drain current

Gate threshold voltage

Static drain-source on-state

resistance

Forward transfer admittance

Input capacitance

Output capacitance

Reverse transfer capacitance

Turn-on delay time

Rise time

Turn-off delay time

Fall time

Total gate charge

Gate-source

Gate-drain

Forward voltage

∗ Pulsed

Absolute maximum ratings (Ta=25°C)

Electrical characteristics (Ta=25°C)

Parameter

charge

charge

Parameter

Continuous

Pulsed

Continuous

Pulsed

•

1cyc. ∗3 Mounted on a ceramic board

V

Symbol

R

V

(BR) DSS

t

t

I

C

I

DS (on)

C

C

GS (th)

d (on)

d (off)

Q

Q

GSS

Y

Q

DSS

t

t

oss

rss

iss

V

fs

r

f

gs

gd

g

V

I

SD

R

F

∗

∗

∗

∗

∗

∗

∗

∗

∗

Min.

0.5

1.5

30

−

−

−

−

−

−

−

−

−

−

−

−

−

−

−

Symbol

−

−

−

−

V

V

Tstg

Tch

V

I

I

I

P

V

FSM

P

P

Tj

DSS

GSS

I

I

I

DP

SP

RM

D

S

F

D

R

D

D

Typ.

110

175

2.8

0.6

0.8

71

76

50

25

10

21

−

−

−

−

−

8

8

∗1

∗1

∗3

∗2

∗3

∗3

−

−

−

−

Max.

100

107

154

1.5

3.9

−55 to +150

10

−

1

−

−

−

−

−

−

−

−

−

−

0.36

0.47

100

1.2

Limits

±2.0

±8.0

1.25

150

150

0.8

3.2

0.9

0.5

2.0

0.7

30

12

30

20

Unit

mΩ

mΩ

mΩ

nC

nC

nC

µA

µA

pF

pF

pF

ns

ns

ns

ns

V

V

S

µA

V

V

V

V

I

V

V

I

I

I

V

V

V

f=1MHz

I

V

V

R

R

V

V

I

D

D

D

D

D

D

GS

DS

DS

DS

DS

GS

DD

GS

DD

GS

=1mA, / V

=2.0A, V

=2.0A, V

=2.0A, V

=1.0A

L

G

=2.0A

W/ELEMENT

W/ELEMENT

W / TOTAL

=15Ω

=10Ω

=12V / V

=30V / V

=10V / I

=10V, I

=10V

=0V

=4.5V

=4.5V

I

I

I

V

S

F

F

R

=3.2A / V

=0.1A

=0.5A

15V

15 V

Unit

=20V

°C

°C

°C

V

V

A

A

A

A

V

V

A

A

Conditions

GS

GS

GS

D

D

GS

=2.0A

DS

=1mA

=4.5V

=4V

=2.5V

GS

=0V

=0V

=0V

GS

=0V

Rev.A

QS5U13

2/4

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