PSMN2R6-40YS,115 NXP Semiconductors, PSMN2R6-40YS,115 Datasheet - Page 2

• Manufacturer Part Number: PSMN2R6-40YS,115
• Description: MOSFET N-CH 40V 100A LFPAK
• Manufacturer: NXP Semiconductors

Specifications of PSMN2R6-40YS,115

• Package / Case: LFPak-4
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 2.8 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 100A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 63nC @ 10V
• Input Capacitance (ciss) @ Vds: 3776pF @ 12V
• Power - Max: 131W
• Mounting Type: Surface Mount
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 2.6 mOhms
• Drain-source Breakdown Voltage: 40 V
• Continuous Drain Current: 100 A
• Power Dissipation: 131 W
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-4906-2; 934063932115

NXP Semiconductors
2. Pinning information
Table 2.
3. Ordering information
Table 3.
PSMN2R6-40YS_1
Product data sheet
Pin
1
2
3
4
mb
Type number
PSMN2R6-40YS
Symbol
S
S
S
G
D
Pinning information
Ordering information
LFPAK
Package
Name
Description
source
source
source
gate
drain
Table 1.
Symbol Parameter
Static characteristics
R
DSon
drain-source
on-state resistance
Description
plastic single-ended surface-mounted package (LFPAK); 4 leads
Quick reference
Rev. 01 — 23 June 2009
Conditions
V
T
see
V
T
see
j
j
N-channel LFPAK 40 V 2.8 mΩ standard level MOSFET
GS
GS
= 100 °C; see
= 25 °C; see
Simplified outline
Figure 13
Figure 13
= 10 V; I
= 10 V; I
D
D
(LFPAK)
SOT669
1 2 3 4
= 25 A;
= 25 A;
Figure
Figure
mb
12;
12;
PSMN2R6-40YS
Graphic symbol
Min
-
-
Typ
-
2
G
mbb076
© NXP B.V. 2009. All rights reserved.
SOT669
Max
3.7
2.8
D
Version
S
Unit
mΩ
mΩ
2 of 13