PSMN2R6-40YS,115 NXP Semiconductors, PSMN2R6-40YS,115 Datasheet - Page 4

• Manufacturer Part Number: PSMN2R6-40YS,115
• Description: MOSFET N-CH 40V 100A LFPAK
• Manufacturer: NXP Semiconductors

Specifications of PSMN2R6-40YS,115

• Package / Case: LFPak-4
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 2.8 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 100A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 63nC @ 10V
• Input Capacitance (ciss) @ Vds: 3776pF @ 12V
• Power - Max: 131W
• Mounting Type: Surface Mount
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 2.6 mOhms
• Drain-source Breakdown Voltage: 40 V
• Continuous Drain Current: 100 A
• Power Dissipation: 131 W
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-4906-2; 934063932115

NXP Semiconductors
5. Thermal characteristics
Table 5.
PSMN2R6-40YS_1
Product data sheet
Symbol
R
Fig 3.
Fig 4.
th(j-mb)
Z
(K/W)
(A)
10
10
10
th(j-mb)
I
10
10
D
10
10
10
-1
-2
-3
-1
1
3
2
1
10
10
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
Transient thermal impedance from junction to mounting base as a function of pulse duration
-1
-6
δ = 0.5
Thermal characteristics
0.1
0.2
0.05
0.02
single shot
Parameter
thermal resistance from
junction to mounting
base
10
Limit R
-5
DSon
= V
Conditions
see
DS
(1)
/ I
Figure 4
D
10
1
-4
Rev. 01 — 23 June 2009
N-channel LFPAK 40 V 2.8 mΩ standard level MOSFET
10
-3
DC
10
10
-2
PSMN2R6-40YS
Min
-
P
10
V
DS
-1
(V)
t
Typ
0.5
p
T
t
p
© NXP B.V. 2009. All rights reserved.
10μ s
100μ s
1ms
10ms
100ms
(s)
δ =
003aad322
003aac456
Max
1.15
T
t
p
t
10
1
2
Unit
K/W
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