IRF540ZPBF International Rectifier, IRF540ZPBF Datasheet - Page 2
![MOSFET N-CH 100V 36A TO-220AB](/photos/5/29/52977/698-to-220ab_sml.jpg)
IRF540ZPBF
Manufacturer Part Number
IRF540ZPBF
Description
MOSFET N-CH 100V 36A TO-220AB
Manufacturer
International Rectifier
Series
HEXFET®r
Specifications of IRF540ZPBF
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
26.5 mOhm @ 22A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
36A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
63nC @ 10V
Input Capacitance (ciss) @ Vds
1770pF @ 25V
Power - Max
92W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Application
For automotive applications
Channel Type
N-Channel
Current, Drain
36 A
Fall Time
39 ns (Typ.)
Gate Charge, Total
42 nC
Mounting And Package Type
PCB Mount and TO-220AB Package
Operating And Storage Temperature
-55 to +175 °C (Max.)
Package Type
TO-220AB
Polarization
N-Channel
Power Dissipation
92 W
Resistance, Drain To Source On
21 Milliohms
Resistance, Thermal, Junction To Case
1.64 °C⁄W (Max.)
Temperature, Operating, Maximum
+175 °C
Temperature, Operating, Minimum
-55 °C
Thermal Resistance, Junction To Ambient
62 °C⁄W
Time, Rise
51 ns (Typ.)
Time, Turn-off Delay
43 ns
Time, Turn-on Delay
15 ns
Transconductance, Forward
36 V
Voltage, Breakdown, Drain To Source
100 V
Voltage, Diode Forward
1.3 V (Typ.)
Voltage, Forward, Diode
1.3 V
Voltage, Gate To Source
±20 V
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
36 A
Mounting Style
Through Hole
Gate Charge Qg
42 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
*IRF540ZPBF
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRF540ZPBF
Manufacturer:
IR
Quantity:
20 000
V
∆V
R
V
gfs
I
I
Q
Q
Q
t
t
t
t
L
L
C
C
C
C
C
C
I
I
V
t
Q
t
Electrical Characteristics @ T
Source-Drain Ratings and Characteristics
DSS
GSS
d(on)
r
d(off)
f
S
SM
rr
on
D
S
2
(BR)DSS
GS(th)
SD
DS(on)
iss
oss
rss
oss
oss
oss
g
gs
gd
rr
(BR)DSS
eff.
/∆T
J
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Parameter
Ã
Parameter
J
= 25°C (unless otherwise specified)
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Min. Typ. Max. Units
Min. Typ. Max. Units
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100
–––
2.0
36
0.093
1770
–––
–––
–––
–––
–––
–––
–––
180
100
730
110
170
–––
–––
–––
9.7
4.5
7.5
21
42
15
15
51
43
39
33
41
-200
26.5
–––
–––
–––
250
200
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
140
4.0
1.3
20
63
36
50
62
V/°C
mΩ
µA
nA
nC
nH
nC
pF
ns
ns
V
V
V
A
V
V
Reference to 25°C, I
V
V
V
V
V
V
V
I
V
V
V
I
R
V
Between lead,
6mm (0.25in.)
from package
and center of die contact
V
V
ƒ = 1.0MHz
V
V
V
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
di/dt = 100A/µs
D
D
J
J
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
GS
DS
GS
GS
GS
G
= 22A
= 22A
= 25°C, I
= 25°C, I
= 12 Ω
= V
= 25V, I
= 100V, V
= 100V, V
= 80V
= 25V
= 0V, I
= 10V, I
= 20V
= -20V
= 10V
= 50V
= 10V
= 0V
= 0V, V
= 0V, V
= 0V, V
GS
, I
e
e
D
Conditions
Conditions
D
DS
S
F
D
D
DS
DS
= 250µA
= 250µA
= 22A, V
= 22A, V
= 22A
= 22A
GS
GS
= 0V to 80V
= 1.0V, ƒ = 1.0MHz
= 80V, ƒ = 1.0MHz
e
= 0V
= 0V, T
www.irf.com
D
e
= 1mA
GS
DD
J
= 50V
= 125°C
G
= 0V
f
e
S
D