IRF540ZPBF International Rectifier, IRF540ZPBF Datasheet - Page 8
![MOSFET N-CH 100V 36A TO-220AB](/photos/5/29/52977/698-to-220ab_sml.jpg)
IRF540ZPBF
Manufacturer Part Number
IRF540ZPBF
Description
MOSFET N-CH 100V 36A TO-220AB
Manufacturer
International Rectifier
Series
HEXFET®r
Specifications of IRF540ZPBF
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
26.5 mOhm @ 22A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
36A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
63nC @ 10V
Input Capacitance (ciss) @ Vds
1770pF @ 25V
Power - Max
92W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Application
For automotive applications
Channel Type
N-Channel
Current, Drain
36 A
Fall Time
39 ns (Typ.)
Gate Charge, Total
42 nC
Mounting And Package Type
PCB Mount and TO-220AB Package
Operating And Storage Temperature
-55 to +175 °C (Max.)
Package Type
TO-220AB
Polarization
N-Channel
Power Dissipation
92 W
Resistance, Drain To Source On
21 Milliohms
Resistance, Thermal, Junction To Case
1.64 °C⁄W (Max.)
Temperature, Operating, Maximum
+175 °C
Temperature, Operating, Minimum
-55 °C
Thermal Resistance, Junction To Ambient
62 °C⁄W
Time, Rise
51 ns (Typ.)
Time, Turn-off Delay
43 ns
Time, Turn-on Delay
15 ns
Transconductance, Forward
36 V
Voltage, Breakdown, Drain To Source
100 V
Voltage, Diode Forward
1.3 V (Typ.)
Voltage, Forward, Diode
1.3 V
Voltage, Gate To Source
±20 V
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
36 A
Mounting Style
Through Hole
Gate Charge Qg
42 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
*IRF540ZPBF
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRF540ZPBF
Manufacturer:
IR
Quantity:
20 000
8
+
-
D.U.T
Fig 17.
+
-
•
•
•
•
SD
•
•
•
Fig 18b. Switching Time Waveforms
Fig 18a. Switching Time Test Circuit
V
90%
10%
V
DS
GS
-
G
HEXFET
t
d(on)
+
t
r
®
≤ 0.1 %
≤ 1
+
Power MOSFETs
-
Re-Applied
Voltage
Reverse
Recovery
Current
t
d(off)
Driver Gate Drive
D.U.T. I
D.U.T. V
Inductor Curent
P.W.
t
f
SD
DS
Waveform
Waveform
Ripple ≤ 5%
for N-Channel
Body Diode
+
-
Period
Body Diode Forward
Diode Recovery
Current
dv/dt
Forward Drop
di/dt
D =
www.irf.com
Period
P.W.
V
V
I
SD
GS
DD
=10V