IRF540ZPBF International Rectifier, IRF540ZPBF Datasheet - Page 5

• Manufacturer Part Number: IRF540ZPBF
• Description: MOSFET N-CH 100V 36A TO-220AB
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF540ZPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 26.5 mOhm @ 22A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 36A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 63nC @ 10V
• Input Capacitance (ciss) @ Vds: 1770pF @ 25V
• Power - Max: 92W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Application: For automotive applications
• Channel Type: N-Channel
• Current, Drain: 36 A
• Fall Time: 39 ns (Typ.)
• Gate Charge, Total: 42 nC
• Mounting And Package Type: PCB Mount and TO-220AB Package
• Operating And Storage Temperature: -55 to +175 °C (Max.)
• Package Type: TO-220AB
• Polarization: N-Channel
• Power Dissipation: 92 W
• Resistance, Drain To Source On: 21 Milliohms
• Resistance, Thermal, Junction To Case: 1.64 °C⁄W (Max.)
• Temperature, Operating, Maximum: +175 °C
• Temperature, Operating, Minimum: -55 °C
• Thermal Resistance, Junction To Ambient: 62 °C⁄W
• Time, Rise: 51 ns (Typ.)
• Time, Turn-off Delay: 43 ns
• Time, Turn-on Delay: 15 ns
• Transconductance, Forward: 36 V
• Voltage, Breakdown, Drain To Source: 100 V
• Voltage, Diode Forward: 1.3 V (Typ.)
• Voltage, Forward, Diode: 1.3 V
• Voltage, Gate To Source: ±20 V
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 36 A
• Mounting Style: Through Hole
• Gate Charge Qg: 42 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRF540ZPBF

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0.001
0.01
0.1
10
40
30
20
10
Fig 9. Maximum Drain Current Vs.
1
0
1E-006
25
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
D = 0.50
0.02
0.20
0.10
0.05
0.01
Case Temperature
50
T J , Junction Temperature (°C)
SINGLE PULSE
( THERMAL RESPONSE )
75
1E-005
100
125
t 1 , Rectangular Pulse Duration (sec)
150
0.0001
175
3.0
2.5
2.0
1.5
1.0
0.5
Fig 10. Normalized On-Resistance
-60 -40 -20 0
0.001
I D = 22A
V GS = 10V
T J , Junction Temperature (°C)
Vs. Temperature
20 40 60 80 100 120 140 160 180
0.01
5
0.1