IXTA200N055T2 IXYS, IXTA200N055T2 Datasheet - Page 5

• Manufacturer Part Number: IXTA200N055T2
• Description: MOSFET N-CH 55V 200A TO-263
• Manufacturer: IXYS
• Series: TrenchT2™r

Specifications of IXTA200N055T2

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 4.2 mOhm @ 50A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 200A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 109nC @ 10V
• Input Capacitance (ciss) @ Vds: 6800pF @ 25V
• Power - Max: 360W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0042 Ohms
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 200 A
• Power Dissipation: 360 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 55
• Id(cont), Tc=25°c, (a): 200
• Rds(on), Max, Tj=25°c, (?): 0.0042
• Ciss, Typ, (pf): 6970
• Qg, Typ, (nc): 109
• Trr, Typ, (ns): 49
• Pd, (w): 360
• Rthjc, Max, (k/w): 0.42
• Package Style: TO-263
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

© 2008 IXYS CORPORATION, All rights reserved
140
120
100
29
28
27
26
25
24
80
60
40
20
25
24
23
22
21
20
19
0
24
25
4
Switching Times vs. Gate Resistance
26
t
T
V
Switching Times vs. Drain Current
r
J
DS
35
= 125ºC, V
6
28
= 30V
Rise Time vs. Junction Temperature
Fig. 17. Resistive Turn-off
Fig. 15. Resistive Turn-on
30
45
T
J
8
I
D
= 125ºC
Fig. 13. Resistive Turn-on
t
32
d(on)
= 50A, 25A
GS
I
55
T
D
= 10V
10
34
R
J
- - - -
= 25A
- Degrees Centigrade
G
I
D
- Ohms
65
- Amperes
36
I
D
12
= 50A
38
75
t
R
V
f
DS
G
40
T
14
= 3.3 Ω , V
J
= 30V
= 25ºC
85
42
16
t
44
d(off)
95
GS
= 10V
46
- - - -
18
R
V
V
105
GS
DS
G
48
= 3.3 Ω
= 10V
= 30V
20
50
115
52
48
44
40
36
32
28
24
80
70
60
50
40
30
125
140
120
100
30
29
28
27
26
25
24
23
24.0
23.5
23.0
22.5
22.0
21.5
21.0
20.5
20.0
80
60
40
20
25
Switching Times vs. Junction Temperature
4
24
Switching Times vs. Gate Resistance
t
T
V
t
R
V
35
f
J
f
DS
DS
G
26
= 125ºC, V
R
V
V
6
= 3.3 Ω , V
= 30V
G
GS
DS
= 30V
= 3.3 Ω
45
Fig. 18. Resistive Turn-off
= 10V
= 30V
28
Fig. 16. Resistive Turn-off
8
Rise Time vs. Drain Current
t
30
t
d(off)
Fig. 14. Resistive Turn-on
55
d(off)
T
GS
GS
J
- Degrees Centigrade
= 10V
= 10V
32
10
- - - -
- - - -
65
R
I
G
34
D
I
- Ohms
- Amperes
I
12
75
D
D
I
= 25A
= 50A
D
36
= 50A
T
J
85
= 125ºC
14
38
I
IXTA200N055T2
D
IXTP200N055T2
T
J
= 25A
= 25ºC
95
40
16
105
42
18
44
115
46
125
20
240
200
160
120
80
40
0
48
90
80
70
60
50
40
30
20
50