IXTP52P10P IXYS, IXTP52P10P Datasheet - Page 3
![MOSFET P-CH 100V 52A TO-220](/photos/5/50/55030/ixtp52p10p_sml.jpg)
IXTP52P10P
Manufacturer Part Number
IXTP52P10P
Description
MOSFET P-CH 100V 52A TO-220
Manufacturer
IXYS
Series
PolarP™r
Datasheet
1.IXTP52P10P.pdf
(6 pages)
Specifications of IXTP52P10P
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
50 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
52A
Vgs(th) (max) @ Id
4.5V @ 250µA
Gate Charge (qg) @ Vgs
60nC @ 10V
Input Capacitance (ciss) @ Vds
2845pF @ 25V
Power - Max
300W
Mounting Type
Through Hole
Package / Case
TO-220
Configuration
Single
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.05 Ohms
Drain-source Breakdown Voltage
- 100 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
52 A
Power Dissipation
300 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
-100.00
Id(cont), Tc=25°c, (a)
-52.00
Rds(on), Max, Tj=25°c, (?)
0.050
Ciss, Typ, (pf)
2845
Qg, Typ, (nc)
60
Trr, Typ, (ns)
120
Pd, (w)
300
Rthjc, Max, (k/w)
0.42
Package Style
TO-220
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
© 2008 IXYS CORPORATION, All rights reserved
TO-263 (IXTA) Outline
TO-220 (IXTP) Outline
Pins: 1 - Gate
2 - Drain
TO-3P (IXTQ) Outline
TO-247 (IXTH) Outline
Dim.
Terminals: 1 - Gate
A
A
A
b
b
b
C
D
E
e
L
L1
∅P
Q
R
1
2
1
2
20.80
15.75
19.81
1.65
2.87
5.20
3.55
5.89
4.32
Min.
4.7
2.2
2.2
1.0
Millimeter
1
.4
IXTA52P10P IXTH52P10P
IXTP52P10P IXTQ52P10P
2
21.46
16.26
20.32
Max.
2.54
2.13
3.12
5.72
4.50
3.65
6.40
5.49
3
5.3
2.6
1.4
.8
e
∅ P
0.205 0.225
0.232 0.252
.185
.087
.059
.040
.065
.113
.016
.819
.610
.780
.140
.170
Min.
2 - Drain
Inches
Max.
.209
.102
.098
.055
.084
.123
.031
.845
.640
.800
.177
.144
.216