IXTP52P10P IXYS, IXTP52P10P Datasheet - Page 5
![MOSFET P-CH 100V 52A TO-220](/photos/5/50/55030/ixtp52p10p_sml.jpg)
IXTP52P10P
Manufacturer Part Number
IXTP52P10P
Description
MOSFET P-CH 100V 52A TO-220
Manufacturer
IXYS
Series
PolarP™r
Datasheet
1.IXTP52P10P.pdf
(6 pages)
Specifications of IXTP52P10P
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
50 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
52A
Vgs(th) (max) @ Id
4.5V @ 250µA
Gate Charge (qg) @ Vgs
60nC @ 10V
Input Capacitance (ciss) @ Vds
2845pF @ 25V
Power - Max
300W
Mounting Type
Through Hole
Package / Case
TO-220
Configuration
Single
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.05 Ohms
Drain-source Breakdown Voltage
- 100 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
52 A
Power Dissipation
300 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
-100.00
Id(cont), Tc=25°c, (a)
-52.00
Rds(on), Max, Tj=25°c, (?)
0.050
Ciss, Typ, (pf)
2845
Qg, Typ, (nc)
60
Trr, Typ, (ns)
120
Pd, (w)
300
Rthjc, Max, (k/w)
0.42
Package Style
TO-220
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
© 2008 IXYS CORPORATION, All rights reserved
10,000
1,000
-160
-140
-120
-100
-70
-60
-50
-40
-30
-20
-10
-80
-60
-40
-20
100
0
0
-0.5
-3.0
0
f
-3.5
-1.0
= 1 MHz
-5
-4.0
Fig. 9. Forward Voltage Drop of
-1.5
-10
Fig. 7. Input Admittance
-4.5
Fig. 11. Capacitance
-2.0
-15
Intrinsic Diode
T
-5.0
J
V
= 125ºC
V
V
-2.5
GS
SD
DS
-5.5
- Volts
-20
- Volts
- Volts
-3.0
-6.0
T
-25
J
= - 40ºC
-3.5
125ºC
-6.5
25ºC
T
J
-30
= 25ºC
-4.0
C oss
-7.0
C rss
C iss
-35
-4.5
-7.5
-5.0
-8.0
-40
-
1,000
-
100
-
-10
32
28
24
20
16
12
10
-
-9
-8
-7
-6
-5
-4
-3
-2
-1
8
4
0
1
0
-
10
0
0
10ms
R
DS(on)
Fig. 12. Forward-Bias Safe Operating Area
T
T
Single Pulse
5
DC, 100ms
V
I
I
J
C
D
G
DS
= 150ºC
-10
= 25ºC
= - 26A
= -1mA
Limit @ V
10
= - 50V
1ms
Fig. 8. Transconductance
15
IXTA52P10P IXTH52P10P
IXTP52P10P IXTQ52P10P
-20
GS
Fig. 10. Gate Charge
20
= -15V
Q
I
D
G
- Amperes
25
V
-30
- NanoCoulombs
DS
- Volts
30
100µs
-40
35
40
125ºC
-50
45
T
J
25ºC
25µs
= - 40ºC
50
-60
55
-
-70
100
60