IXTP52P10P IXYS, IXTP52P10P Datasheet - Page 6
![MOSFET P-CH 100V 52A TO-220](/photos/5/50/55030/ixtp52p10p_sml.jpg)
IXTP52P10P
Manufacturer Part Number
IXTP52P10P
Description
MOSFET P-CH 100V 52A TO-220
Manufacturer
IXYS
Series
PolarP™r
Datasheet
1.IXTP52P10P.pdf
(6 pages)
Specifications of IXTP52P10P
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
50 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
52A
Vgs(th) (max) @ Id
4.5V @ 250µA
Gate Charge (qg) @ Vgs
60nC @ 10V
Input Capacitance (ciss) @ Vds
2845pF @ 25V
Power - Max
300W
Mounting Type
Through Hole
Package / Case
TO-220
Configuration
Single
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.05 Ohms
Drain-source Breakdown Voltage
- 100 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
52 A
Power Dissipation
300 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
-100.00
Id(cont), Tc=25°c, (a)
-52.00
Rds(on), Max, Tj=25°c, (?)
0.050
Ciss, Typ, (pf)
2845
Qg, Typ, (nc)
60
Trr, Typ, (ns)
120
Pd, (w)
300
Rthjc, Max, (k/w)
0.42
Package Style
TO-220
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
IXYS reserves the right to change limits, test conditions, and dimensions.
1.00
0.10
0.01
0.0001
0.001
Fig. 13. Maximum Transient Thermal Impedance
0.01
Pulse Width - Seconds
0.1
IXTA52P10P IXTH52P10P
IXTP52P10P IXTQ52P10P
1
IXYS REF: T_52P10P(B5)3-25-08-B
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