STB21NK50Z STMicroelectronics, STB21NK50Z Datasheet

MOSFET N-CH 500V 17A D2PAK

STB21NK50Z

Manufacturer Part Number
STB21NK50Z
Description
MOSFET N-CH 500V 17A D2PAK
Manufacturer
STMicroelectronics
Series
SuperMESH™r
Datasheet

Specifications of STB21NK50Z

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
270 mOhm @ 8.5A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
17A
Vgs(th) (max) @ Id
4.5V @ 100µA
Gate Charge (qg) @ Vgs
119nC @ 10V
Input Capacitance (ciss) @ Vds
2600pF @ 25V
Power - Max
190W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.27 Ohm @ 10 V
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
17 A
Power Dissipation
190000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-8767-2

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
STB21NK50Z
Manufacturer:
ST
0
Company:
Part Number:
STB21NK50Z
Quantity:
2 024
Part Number:
STB21NK50ZT4
Manufacturer:
NXP
Quantity:
96 000
Part Number:
STB21NK50ZT4
Manufacturer:
ST
0
Features
Applications
Description
The SuperMESH™ series is obtained through an
extreme optimization of ST’s well established
strip-based PowerMESH™ layout. In addition to
pushing on-resistance significantly down, special
care is taken to ensure a very good dv/dt
capability for the most demanding applications.
Table 1.
September 2008
STB21NK50Z
Extremely high dv/dt capability
100% avalanche tested
Gate charge minimized
Very low intrinsic capacitances
Very good manufacturing repeatability
Switching applications
– Automotive
Type
STB21NK50Z
Order code
Device summary
500 V
V
DSS
< 0.27 Ω
R
max
DS(on)
Zener-protected superMESH™ Power MOSFET
21NK50Z
Marking
17 A
I
D
190 W
Pw
N-channel 500 V, 0.23 Ω, 17 A, D
Rev 1
Figure 1.
Package
D²PAK
Internal schematic diagram
D²PAK
STB21NK50Z
1
3
Tape and reel
Packaging
www.st.com
2
PAK
1/13
13

Related parts for STB21NK50Z

STB21NK50Z Summary of contents

Page 1

... Table 1. Device summary Order code STB21NK50Z September 2008 N-channel 500 V, 0.23 Ω Zener-protected superMESH™ Power MOSFET 190 W Figure 1. Marking 21NK50Z Rev 1 STB21NK50Z 3 1 D²PAK Internal schematic diagram Package Packaging D²PAK Tape and reel 2 PAK 1/13 www.st.com 13 ...

Page 2

... Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Packaging mechanical data 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 2/ STB21NK50Z ...

Page 3

... STB21NK50Z 1 Electrical ratings Table 2. Absolute maximum ratings Symbol V Drain-source voltage ( Gate-source voltage GS I Drain current (continuous Drain current (continuous (1) I Drain current (pulsed Total dissipation at T TOT Derating Factor Vesd(G-S) G-S ESD (HBM C=100 pF, R=1.5 kΩ) (2) dv/dt Peak diode recovery voltage slope ...

Page 4

... V = Max rating Max rating @125 ° ± Parameter Test conditions f=1 MHz = =400 = (see Figure 15) DSS STB21NK50Z Min. Typ 500 GS = 100 µ 8.5 A 0.23 D Min. Typ. Max. 2600 =0 328 400 V 187 = 15.5 42 oss Max. Unit V 1 µA 50 µA 10 µA ± ...

Page 5

... STB21NK50Z Table 7. Switching times Symbol t Turn-on delay time d(on) t Rise time r t Turn-off delay time d(off) t Fall time f Table 8. Gate-source Zener diode Symbol (1) BV Gate-source breakdown voltage GSO 1. The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source ...

Page 6

... Electrical characteristics 2.1 Electrical characteristics (curves) Figure 2. Safe operating area Figure 4. Output characteristics Figure 6. Normalized B VDSS 6/13 Figure 3. Figure 5. vs temperature Figure 7. STB21NK50Z Thermal impedance Transfer characteristics Static drain-source on resistance ...

Page 7

... STB21NK50Z Figure 8. Gate charge vs gate-source voltage Figure 9. Figure 10. Normalized gate threshold voltage vs temperature Figure 12. Source-drain diode forward characteristics Electrical characteristics Capacitance variations Figure 11. Normalized on resistance vs temperature Figure 13. Maximum avalanche energy vs temperature 7/13 ...

Page 8

... Test circuits Figure 14. Switching times test circuit for resistive load Figure 16. Test circuit for inductive load switching and diode recovery times Figure 18. Unclamped inductive waveform 8/13 Figure 15. Gate charge test circuit Figure 17. Unclamped Inductive load test circuit Figure 19. Switching time waveform STB21NK50Z ...

Page 9

... STB21NK50Z 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label ...

Page 10

... STB21NK50Z inch Min Typ Max 0.173 0.181 0.001 0.009 0.027 0.037 0.045 0.067 0.017 0.024 0.048 0.053 0.352 0.368 0.295 0.394 0.409 ...

Page 11

... STB21NK50Z 5 Packaging mechanical data 2 D PAK FOOTPRINT TAPE MECHANICAL DATA mm DIM. MIN. MAX. MIN. A0 10.5 10.7 0.413 0.421 B0 15.7 15.9 0.618 0.626 D 1.5 1.6 0.059 0.063 D1 1.59 1.61 0.062 0.063 E 1.65 1.85 0.065 0.073 F 11.4 11.6 0.449 0.456 K0 4.8 5.0 0.189 0.197 P0 3 ...

Page 12

... Revision history 6 Revision history Table 10. Document revision history Date 16-Sep-2008 12/13 Revision 1 First issue STB21NK50Z Changes ...

Page 13

... STB21NK50Z Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. ...

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