STB21NK50Z STMicroelectronics, STB21NK50Z Datasheet - Page 5

• Manufacturer Part Number: STB21NK50Z
• Description: MOSFET N-CH 500V 17A D2PAK
• Manufacturer: STMicroelectronics
• Series: SuperMESH™r

Specifications of STB21NK50Z

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 270 mOhm @ 8.5A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 17A
• Vgs(th) (max) @ Id: 4.5V @ 100µA
• Gate Charge (qg) @ Vgs: 119nC @ 10V
• Input Capacitance (ciss) @ Vds: 2600pF @ 25V
• Power - Max: 190W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.27 Ohm @ 10 V
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 17 A
• Power Dissipation: 190000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-8767-2

STB21NK50Z
Table 7.
Table 8.
1. The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
Table 9.
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration=300µs, duty cycle 1.5%
BV
Symbol
Symbol
Symbol
I
V
SDM
t
t
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components.
I
I
d(on)
d(off)
GSO
RRM
RRM
I
SD
Q
Q
t
SD
t
t
t
r
f
rr
rr
rr
rr
(2)
(1)
(1)
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate-source breakdown voltage
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Switching times
Gate-source Zener diode
Source drain diode
Parameter
Parameter
Parameter
V
R
(see Figure 16)
V
R
(see Figure 16)
Igs=±1 mA
(open drain)
I
I
di/dt = 100 A/µs,
V
(see Figure 16)
I
di/dt = 100 A/µs,
V
(see Figure 16)
DD
DD
SD
SD
SD
G
G
R
R
= 4.7Ω, V
= 4.7 Ω, V
= 100 V
= 100 V, Tj=150 °C
Test conditions
= 250 V, I
= 250 V, I
Test conditions
= 17 A, V
= 17 A,
= 17 A,
Test conditions
GS
GS
GS
D
D
= 8.5 A,
= 8.5 A,
= 10 V
=10 V
=0
Electrical characteristics
Min.
Min.
Min
30
Typ.
3.90
5.72
Typ.
Typ.
355
440
22
25
28
20
70
15
Max
Max.
Max.
1.6
17
68
Unit
Unit
Unit
µC
µC
ns
ns
ns
ns
ns
ns
A
A
V
A
A
V
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