STB21NK50Z STMicroelectronics, STB21NK50Z Datasheet - Page 7

• Manufacturer Part Number: STB21NK50Z
• Description: MOSFET N-CH 500V 17A D2PAK
• Manufacturer: STMicroelectronics
• Series: SuperMESH™r

Specifications of STB21NK50Z

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 270 mOhm @ 8.5A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 17A
• Vgs(th) (max) @ Id: 4.5V @ 100µA
• Gate Charge (qg) @ Vgs: 119nC @ 10V
• Input Capacitance (ciss) @ Vds: 2600pF @ 25V
• Power - Max: 190W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.27 Ohm @ 10 V
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 17 A
• Power Dissipation: 190000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-8767-2

STB21NK50Z
Figure 8.
Figure 10. Normalized gate threshold voltage
Figure 12. Source-drain diode forward
Gate charge vs gate-source voltage Figure 9.
vs temperature
characteristics
Figure 11. Normalized on resistance vs
Figure 13. Maximum avalanche energy vs
Capacitance variations
temperature
temperature
Electrical characteristics
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