STW20NM50 STMicroelectronics, STW20NM50 Datasheet
STW20NM50
Specifications of STW20NM50
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STW20NM50 Summary of contents
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... I 20A, di/dt 400A/µ (BR)DSS February 2004 R I DS(on) D < 0. INTERNAL SCHEMATIC DIAGRAM Parameter = 25° 100° 25° JMAX. STW20NM50 MDmesh™ MOSFET TO-247 Value Unit ±30 20 12.6 80 214 1.44 W/°C 15 V/ns –65 to 150 °C 150 ° ...
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... STW20NM50 THERMAL DATA Rthj-case Thermal Resistance Junction-case Rthj-amb Thermal Resistance Junction-ambient T Maximum Lead Temperature For Soldering Purpose l AVALANCHE CHARACTERISTICS Symbol I Avalanche Current, Repetitive or Not-Repetitive AR (pulse width limited Single Pulse Avalanche Energy AS (starting ° ELECTRICAL CHARACTERISTICS (T OFF Symbol Parameter V Drain-source (BR)DSS Breakdown Voltage ...
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... G GS (see test circuit, Figure 5) Test Conditions di/dt = 100 A/µ 100 25° (see test circuit, Figure di/dt = 100 A/µ 100 150° (see test circuit, Figure 5) Thermal Impedance STW20NM50 Min. Typ. Max. Unit Min. Typ. Max. Unit Min. Typ. Max. ...
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... STW20NM50 Output Characteristics Transconductance Gate Charge vs Gate-source Voltage 4/8 Transfer Characteristics Static Drain-source On Resistance Capacitance Variations ...
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... Normalized Gate Thereshold Voltage vs Temp. Source-drain Diode Forward Characteristics Normalized On Resistance vs Temperature STW20NM50 5/8 ...
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... STW20NM50 Fig. 1: Unclamped Inductive Load Test Circuit Fig. 3: Switching Times Test Circuit For Resistive Load Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/8 Fig. 2: Unclamped Inductive Waveform Fig. 4: Gate Charge test Circuit ...
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... STW20NM50 inch TYP. MAX. 0.20 0.10 0.03 0.05 0.11 0.07 0.09 0.13 0.43 0.62 0.79 0.17 0.72 0.58 1.36 0.21 0.11 5º 60º ...
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... STW20NM50 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice ...