STW20NM50 STMicroelectronics, STW20NM50 Datasheet - Page 7

• Manufacturer Part Number: STW20NM50
• Description: MOSFET N-CH 550V 20A TO-247
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STW20NM50

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 250 mOhm @ 10A, 10V
• Drain To Source Voltage (vdss): 550V
• Current - Continuous Drain (id) @ 25° C: 20A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 56nC @ 10V
• Input Capacitance (ciss) @ Vds: 1480pF @ 25V
• Power - Max: 214W
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.25 Ohm @ 10 V
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 20 A
• Power Dissipation: 214000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-3262-5

DIM.
Dia
F1
F2
F3
F4
V2
L1
L2
L3
L4
L5
G
M
A
D
E
H
V
F
L
15.45
19.85
14.20
4.85
2.20
0.40
3.70
3.55
MIN.
1
2
3
2
TO-247 MECHANICAL DATA
10.90
18.50
34.60
5.50
mm.
TYP
60º
5º
3
2
15.75
20.15
14.80
MAX.
5.15
2.60
0.80
1.40
2.40
3.40
4.30
3.65
3
0.015
0.19
0.08
0.04
0.07
0.11
0.60
0.78
0.14
0.56
0.07
0.14
MIN.
TYP.
0.11
0.07
0.43
0.72
1.36
0.21
inch
60º
5º
STW20NM50
0.143
MAX.
0.20
0.10
0.03
0.05
0.09
0.13
0.62
0.79
0.17
0.58
0.11
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