STW20NM50 STMicroelectronics, STW20NM50 Datasheet - Page 3

• Manufacturer Part Number: STW20NM50
• Description: MOSFET N-CH 550V 20A TO-247
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STW20NM50

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 250 mOhm @ 10A, 10V
• Drain To Source Voltage (vdss): 550V
• Current - Continuous Drain (id) @ 25° C: 20A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 56nC @ 10V
• Input Capacitance (ciss) @ Vds: 1480pF @ 25V
• Power - Max: 214W
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.25 Ohm @ 10 V
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 20 A
• Power Dissipation: 214000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-3262-5

ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
Safe Operating Area
Symbol
Symbol
Symbol
I
V
SDM
t
t
SD
r(Voff)
Q
d(on)
Q
I
I
I
2. Pulse width limited by safe operating area.
Q
Q
Q
rrm
rrm
SD
t
t
t
t
t
rr
rr
gs
gd
c
r
f
g
rr
rr
(1)
(2)
Turn-on Delay Time
Rise Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Source-drain Current
Source-drain Current (pulsed)
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Off-voltage Rise Time
Fall Time
Cross-over Time
Parameter
Parameter
Parameter
V
R
(see test circuit, Figure 3)
V
V
I
I
V
(see test circuit, Figure 5)
I
V
(see test circuit, Figure 5)
V
R
(see test circuit, Figure 5)
SD
SD
SD
DD
DD
GS
DD
DD
G
DD
G
= 4.7
= 4.7
= 20 A, V
= 20 A, di/dt = 100 A/µs,
= 20 A, di/dt = 100 A/µs,
= 250V, I
= 400 V, I
= 10 V
= 100 V, T
= 100 V, T
= 400 V, I
Test Conditions
Test Conditions
Test Conditions
V
V
GS
GS
GS
D
D
D
j
j
= 10 A
= 10 V
= 25°C
= 150°C
= 20 A,
= 20 A,
= 0
= 10 V
Thermal Impedance
Min.
Min.
Min.
Typ.
Typ.
Typ.
350
435
4.6
5.9
8.5
24
16
40
13
19
23
26
27
9
Max.
Max.
Max.
STW20NM50
1.5
56
20
80
Unit
Unit
Unit
nC
nC
nC
µC
µC
ns
ns
ns
ns
ns
ns
ns
A
A
V
A
A
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