STP20NM60FP STMicroelectronics, STP20NM60FP Datasheet - Page 3

• Manufacturer Part Number: STP20NM60FP
• Description: MOSFET N-CH 600V 20A TO220FP
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STP20NM60FP

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 290 mOhm @ 10A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 20A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 54nC @ 10V
• Input Capacitance (ciss) @ Vds: 1500pF @ 25V
• Power - Max: 45W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.29 Ohm @ 10 V
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 20 A
• Power Dissipation: 45000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 65 C
• Continuous Drain Current Id: 20A
• Drain Source Voltage Vds: 600V
• On Resistance Rds(on): 250mohm
• Rds(on) Test Voltage Vgs: 30V
• Threshold Voltage Vgs Typ: 4V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-2771-5

ELECTRICAL CHARACTERISTICS (CONTINUED)
Table 7: Dynamic
Table 8: Source Drain Diode
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
C
Symbol
Symbol
I
oss eq.
V
SDM
g
t
t
I
I
C
SD
C
C
Q
d(on)
d(off)
Q
fs
RRM
RRM
I
Q
Q
2. Pulse width limited by safe operating area.
3. C
Q
R
SD
t
t
t
oss
t
t
iss
rss
rr
rr
r
c
gs
gd
f
(1)
rr
rr
g
g
(1)
V
(2)
DSS
oss eq.
(3)
.
is defined as a constant equivalent capacitance giving the same charging time as C
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Equivalent Output
Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Cross-over Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Input Resistance
Source-drain Current
Source-drain Current (pulsed)
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
STP20NM60 - STP20NM60FP - STB20NM60 - STW20NM60 - STB20NM60-1
Parameter
Parameter
V
I
V
V
V
R
(Resistive Load see, Figure 3)
V
(See test circuit, Figure 5)
V
V
f = 1 MHz Gate DC Bias = 0
Test Signal Level = 20 mV
Open Drain
I
I
V
(see test circuit, Figure 5)
I
V
(see test circuit, Figure 5)
D
SD
SD
SD
DS
DS
GS
DD
DD
DD
GS
DD
DD
G
= 10 A
= 4.7
= 20 A, V
=20 A, di/dt = 100 A/µs
=20 A, di/dt = 100 A/µs
= 25V, f = 1 MHz, V
> I
= 0V, V
= 200 V, I
= 480 V, I
= 400 V, I
= 10V
= 100 V, T
= 100 V, T
Test Conditions
Test Conditions
D(on)
V
DS
x R
GS
GS
D
D
D
j
j
= 0V to 400 V
= 10 V
= 10 A
= 20 A
= 20 A,
= 25°C
= 150°C
DS(on)max,
= 0
GS
= 0
Min.
Min.
oss
when V
1500
Typ.
Typ.
390
510
350
215
1.6
6.5
25
26
11
35
25
20
11
21
39
10
20
5
6
DS
increases from 0 to 80%
Max.
Max.
1.5
20
80
54
Unit
Unit
nC
nC
nC
µC
µC
pF
pF
pF
pF
ns
ns
ns
ns
ns
ns
ns
S
A
A
V
A
A
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