STP20NM60FP STMicroelectronics, STP20NM60FP Datasheet - Page 5

• Manufacturer Part Number: STP20NM60FP
• Description: MOSFET N-CH 600V 20A TO220FP
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STP20NM60FP

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 290 mOhm @ 10A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 20A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 54nC @ 10V
• Input Capacitance (ciss) @ Vds: 1500pF @ 25V
• Power - Max: 45W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.29 Ohm @ 10 V
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 20 A
• Power Dissipation: 45000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 65 C
• Continuous Drain Current Id: 20A
• Drain Source Voltage Vds: 600V
• On Resistance Rds(on): 250mohm
• Rds(on) Test Voltage Vgs: 30V
• Threshold Voltage Vgs Typ: 4V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-2771-5

Figure 9: Output Characteristics
Figure 10: Transconductance
Figure 11: Transfer Characteristics
STP20NM60 - STP20NM60FP - STB20NM60 - STW20NM60 - STB20NM60-1
Figure 12: Gate Charge vs Gate-source Voltage
Figure 13: Normalized Gate Threshold Voltage
vs Temp.
Figure 14: Static Drain-source On Resistance
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