IXFH160N15T IXYS, IXFH160N15T Datasheet - Page 2

MOSFET N-CH 150V 160A TO-247

IXFH160N15T

Manufacturer Part Number
IXFH160N15T
Description
MOSFET N-CH 150V 160A TO-247
Manufacturer
IXYS
Series
TrenchHV™r
Datasheet

Specifications of IXFH160N15T

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
9.6 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
150V
Current - Continuous Drain (id) @ 25° C
160A
Vgs(th) (max) @ Id
5V @ 1mA
Gate Charge (qg) @ Vgs
160nC @ 10V
Input Capacitance (ciss) @ Vds
8800pF @ 25V
Power - Max
830W
Mounting Type
Through Hole
Package / Case
TO-247
Vdss, Max, (v)
150
Id(cont), Tc=25°c, (a)
160
Rds(on), Max, Tj=25°c, (?)
0.0096
Ciss, Typ, (pf)
8800
Qg, Typ, (nc)
160
Trr, Typ, (ns)
90
Trr, Max, (ns)
-
Pd, (w)
830
Rthjc, Max, (k/w)
0.18
Package Style
TO-247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
IXFH160N15T
Manufacturer:
KSS
Quantity:
3 000
Price:
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
IXFH160N15T2
Manufacturer:
NEC
Quantity:
2 000
Price:
Symbol
(T
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
Source-Drain Diode
(T
I
I
V
t
Q
I
Notes: 1.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,850,072
S
SM
RM
d(on)
r
d(off)
f
rr
fs
SD
iss
oss
rss
thJC
thCS
g(on)
gs
gd
RM
The product presented herein is under development. The Technical Specifications offered are derived
from data gathered during objective characterizations of preliminary engineering lots; but also may yet
contain some information supplied during a pre-production design evaluation. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
J
J
= 25°C unless otherwise specified)
= 25°C, unless otherwise specified)
Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.
V
V
Resistive Switching Times
V
R
V
V
Repetitive, pulse width limited by T
I
I
V
Test Conditions
F
F
DS
GS
GS
GS
GS
R
G
= I
= 80A, -di/dt = 200A/μs
= 75V, V
PRELIMINARY TECHNICAL INFORMATION
= 10V, I
= 10V, V
= 0V, V
= 10V, V
= 2Ω (External)
= 0V
S
, V
GS
= 0V, Note 1
D
DS
GS
DS
= 60A, Note 1
DS
= 25V, f = 1 MHz
= 0V
= 0.5 • V
= 0.5 • V
4,835,592
4,881,106
DSS
DSS
4,931,844
5,017,508
5,034,796
, I
, I
D
D
= 25A
= 0.5 • I
5,049,961
5,063,307
5,187,117
JM
D25
5,237,481
5,381,025
5,486,715
Min.
Min.
Characteristic Values
Characteristic Values
65
6,162,665
6,259,123 B1
6,306,728 B1
8800
1170
0.25
Typ.
Typ.
105
150
160
0.55
21
21
52
29
43
46
90
12
0.18 °C/W
Max.
Max.
160
6,404,065 B1
6,534,343
6,583,505
160
430
1.2
°C/W
nC
nC
nC
μC
pF
pF
pF
ns
ns
ns
ns
μs
S
A
A
V
A
6,683,344
6,710,405 B2 6,759,692
6,710,463
TO-247AD Outline
6,727,585
6,771,478 B2 7,071,537
Terminals: 1 - Gate
Dim.
A
A
A
b
b
b
C
D
E
e
L
L1
ÆP
Q
R
S
1
2
1
2
20.80
15.75
19.81
1.65
2.87
5.20
3.55
5.89
4.32
6.15 BSC
Min.
Millimeter
4.7
2.2
2.2
1.0
IXFH160N15T
1
.4
3 - Source
7,005,734 B2
7,063,975 B2
2
21.46
16.26
20.32
Max.
3
2.54
2.13
3.12
5.72
4.50
3.65
6.40
5.49
5.3
2.6
1.4
.8
0.205 0.225
0.232 0.252
2 - Drain
Tab - Drain
Min.
.185
.087
.059
.040
.065
.113
.016
.819
.610
.780
.140
.170
242 BSC
7,157,338B2
Inches
Max.
.209
.102
.098
.055
.084
.123
.031
.845
.640
.800
.177
.144
.216

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