IXFH160N15T IXYS, IXFH160N15T Datasheet - Page 3

• Manufacturer Part Number: IXFH160N15T
• Description: MOSFET N-CH 150V 160A TO-247
• Manufacturer: IXYS
• Series: TrenchHV™r

Specifications of IXFH160N15T

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 9.6 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 150V
• Current - Continuous Drain (id) @ 25° C: 160A
• Vgs(th) (max) @ Id: 5V @ 1mA
• Gate Charge (qg) @ Vgs: 160nC @ 10V
• Input Capacitance (ciss) @ Vds: 8800pF @ 25V
• Power - Max: 830W
• Mounting Type: Through Hole
• Package / Case: TO-247
• Vdss, Max, (v): 150
• Id(cont), Tc=25°c, (a): 160
• Rds(on), Max, Tj=25°c, (?): 0.0096
• Ciss, Typ, (pf): 8800
• Qg, Typ, (nc): 160
• Trr, Typ, (ns): 90
• Trr, Max, (ns): -
• Pd, (w): 830
• Rthjc, Max, (k/w): 0.18
• Package Style: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

© 2008 IXYS CORPORATION, All rights reserved
160
140
120
100
160
140
120
100
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
80
60
40
20
80
60
40
20
0
0
0.0
0.0
0
Fig. 5. R
V
GS
0.4
0.2
40
= 10V
Fig. 1. Output Characteristics
Fig. 3. Output Characteristics
0.8
0.4
DS(on)
80
1.2
vs. Drain Current
Normalized to I
120
0.6
I
D
V
V
@ 150ºC
1.6
@ 25ºC
DS
DS
- Amperes
V
GS
160
0.8
- Volts
- Volts
V
= 10V
GS
2.0
9V
8V
= 10V
200
1.0
8V
7V
2.4
D
= 80A Value
240
1.2
T
T
J
2.8
J
= 175ºC
6V
5V
= 25ºC
7V
6V
5V
280
1.4
3.2
320
1.6
3.6
350
300
250
200
150
100
3.2
2.8
2.4
2.0
1.6
1.2
0.8
0.4
90
80
70
60
50
40
30
20
10
50
0
0
-50
-50
0
Fig. 6. Drain Current vs. Case Temperature
Fig. 4. R
V
GS
V
Fig. 2. Extended Output Characteristics
-25
-25
1
GS
External Lead Current Limit
= 10V
= 10V
9V
8V
2
0
0
DS(on)
vs. Junction Temperature
7V
6V
5V
T
C
3
T
25
- Degrees Centigrade
25
J
Normalized to I
- Degrees Centigrade
V
4
DS
50
@ 25ºC
50
- Volts
I
5
D
= 160A
75
75
IXFH160N15T
6
100
100
D
7
= 80A Value
125
125
I
D
8
= 80A
150
150
9
175
175
10