TPCF8103(TE85L,F) Toshiba, TPCF8103(TE85L,F) Datasheet - Page 3

• Manufacturer Part Number: TPCF8103(TE85L,F)
• Description: MOSFET P-CH 20V 2.7A VS-8
• Manufacturer: Toshiba

Specifications of TPCF8103(TE85L,F)

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 110 mOhm @ 1.4A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 2.7A
• Vgs(th) (max) @ Id: 1.2V @ 200µA
• Gate Charge (qg) @ Vgs: 6nC @ 5V
• Input Capacitance (ciss) @ Vds: 470pF @ 10V
• Power - Max: 700mW
• Mounting Type: Surface Mount
• Package / Case: VS-8 (2-3U1A)
• Configuration: Single Hex Drain
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.11 Ohms
• Drain-source Breakdown Voltage: - 20 V
• Gate-source Breakdown Voltage: 8 V
• Continuous Drain Current: 2.7 A
• Power Dissipation: 2.5 W
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: TPCF8103(TE85L,F); TPCF8103FTR

Electrical Characteristics
Source-Drain Ratings and Characteristics
Gate leakage current
Drain cut-off current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time
Total gate charge
(gate-source plus gate-drain)
Gate-source charge
Gate-drain (“miller”) charge
Drain reverse
current
Forward voltage (diode)
Characteristics
Characteristics
Pulse (Note 1)
Rise time
Turn-on time
Fall time
Turn-off time
(Ta = 25°C)
Symbol
V
I
DRP
DSF
V
V
R
Symbol
(BR) DSS
(BR) DSX
DS (ON)
I
I
C
|Y
C
C
Q
GSS
Q
DSS
V
t
t
Q
oss
on
off
rss
t
t
iss
gs
gd
I
th
fs
r
f
g
DR
|
= -2.7 A , V
V
V
I
I
V
V
V
V
V
V
Duty < = 1%, t
V
I
V
D
D
D
GS
DS
DS
GS
GS
GS
DS
DS
DD
GS
= -10 mA, V
= -10 mA, V
= -2.7 A
3
(Ta = 25°C)
-5 V
= -20 V, V
= -10 V, I
= -10 V, I
= -10 V, V
= ±8 V, V
= -1.8V, I
= -2.5 V, I
= -4.5 V, I
∼ − -16 V, V
GS
0 V
Test Condition
= 0 V
Test Condition
w
⎯
D
D
D
DS
= 10 µs
GS
GS
GS
D
D
GS
GS
= -200µA
= -1.4 A
= -0.7 A
= -1.4 A
= -1.4A
= 0 V
= 0 V
= 8 V
V
= 0 V
= 0 V, f = 1 MHz
= -5 V,
I
D
DD
= -1.4 A
∼ − -10 V
V
OUT
Min
Min
-0.5
-30
-12
2.4
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Typ.
Typ.
215
110
470
4.7
⎯
⎯
⎯
⎯
⎯
72
70
80
26
⎯
⎯
5
9
8
6
4
2
TPCF8103
2006-11-16
-10.8
Max
Max
-1.2
±10
300
160
110
-10
1.2
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Unit
Unit
mΩ
µA
µA
pF
nC
ns
V
V
S
A
V