TPCF8103(TE85L,F) Toshiba, TPCF8103(TE85L,F) Datasheet - Page 5

MOSFET P-CH 20V 2.7A VS-8

TPCF8103(TE85L,F)

Manufacturer Part Number
TPCF8103(TE85L,F)
Description
MOSFET P-CH 20V 2.7A VS-8
Manufacturer
Toshiba
Datasheet

Specifications of TPCF8103(TE85L,F)

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
110 mOhm @ 1.4A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
2.7A
Vgs(th) (max) @ Id
1.2V @ 200µA
Gate Charge (qg) @ Vgs
6nC @ 5V
Input Capacitance (ciss) @ Vds
470pF @ 10V
Power - Max
700mW
Mounting Type
Surface Mount
Package / Case
VS-8 (2-3U1A)
Configuration
Single Hex Drain
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.11 Ohms
Drain-source Breakdown Voltage
- 20 V
Gate-source Breakdown Voltage
8 V
Continuous Drain Current
2.7 A
Power Dissipation
2.5 W
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
TPCF8103(TE85L,F)
TPCF8103FTR
10000
1000
300
250
200
150
100
100
2.5
1.5
0.5
50
10
−0.1
0
−80
3
2
1
0
0
Common source
V GS = 0 V
f = 1 MHz
Ta = 25°C
−2.5 V
−4.5 V
(1) t = 5 s
(1) DC
(2) t = 5 s
(2) DC
Common source
Pulse test
V GS = −1.8 V
−40
Drain-source voltage V DS (V)
Ambient temperature Ta (°C)
Ambient temperature Ta (°C)
40
Capacitance – V
−1
0
R
DS (ON)
(1) Device mounted on a
(2) Device mounted on a
I D = −0.7, −1.4, −2.7 A
P
D
glass-epoxy board (a) (Note 2a)
glass-epoxy board (b) (Note 2b)
40
80
– Ta
I D = −1.4 A
I D = −2.7 A
– Ta
−10
80
DS
120
C oss
C rss
C iss
I D = −1.4 A
120
−0.7 A
−0.7 A
−100
160
160
5
−100
−2.0
−1.5
−1.0
−0.5
−0.0
−10
−20
−16
−12
−1
−8
−4
−80
0
0
0
Common source
Ta = 25°C
Pulse test
Common source
V DS = −10 V
I D = −200 µA
Pulse test
Dynamic input/output characteristics
−2.5
V DS
−40
0.4
Drain-source voltage V DS (V)
−2
Ambient temperature Ta (°C)
Total gate charge Q g (nC)
−1.8
−4.5
0
−1
0.8
−4
I
DR
V
th
V GS = 0 V
– V
40
– Ta
DS
1.2
−6
V GS
80
−4 V
Common source
I D = −2.7 A
Ta = 25°C
Pulse test
V DD = −16 V
TPCF8103
1.6
−8
120
2006-11-16
−8 V
160
−10
2.0
−10
−8
−6
−4
−2
0

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