TPCA8048-H(TE12L,Q Toshiba, TPCA8048-H(TE12L,Q Datasheet - Page 6

• Manufacturer Part Number: TPCA8048-H(TE12L,Q
• Description: MOSFET N-CH 60V 35A 8-SOP ADV
• Manufacturer: Toshiba

Specifications of TPCA8048-H(TE12L,Q

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 35A
• Mounting Type: Surface Mount
• Package / Case: 8-SOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power - Max: -
• Gate Charge (qg) @ Vgs: -
• Vgs(th) (max) @ Id: -
• Rds On (max) @ Id, Vgs: -
• Other names: TPCA8048-HTE12LQTR

6
These DC-DC converter ICs are best suited to low-voltage, high-current drive of ICs implemented in various equipment, such
as SoCs and ASICs.
Small and efficient DC-DC converters can be built by adding only a few external parts.
●
●
●
●
Single-Output DC-DC Converter ICs
Multi-Chip Module (MCM)
Features
●
●
●
●
●
●
Application Circuit Example (V
Efficiency Curves
Features
●
●
●
●
I
fast transient response using current-mode control.
soft-start (with programmable soft-start time)
Available with output current capabilities ranging from 0.7 A to 5.0 A.
High efficiency: 95% typical when the TCV7104FN is used @ V
Reduces the size of external parts by offering the high-frequency switching ability and offers
High accuracy reference voltage (V
A ceramic capacitor can be used as an output filter capacitor.
Various features: Thermal shutdown, overcurrent protection, undervoltage lockout (UVLO),
Designed as low-voltage, high-current buck DC-DC converters for CPUs, etc.
Efficient heat radiation from the package bottom to the PCB
Wire impedance reduction with internal wire optimization
The dedicated driver IC provides high-efficiency operation with optimal dead time control.
DC-DC Converter ICs
OUT
(with the TCV7100/01/02/03F, TCV7104/06FN @ Tj = 25°C)
= 0.7 A, Tj = 25°C
GND
V
EN
IN
100
90
80
70
60
50
DC-DC Converter ICs
0
C
10 μF
IN
C
C
V
0.5
EN
SS
IN2
C
Output Current, I
SS
High-side
TCV7104FN
MOSFET
MOSFET
Low-side
OUT
FB
SGND
): 0.8 V ± 1%
= 3.3V)
V
1
IN1
PGND
OUT
L
V
(A)
X
FB
1.5
L
R
7.5 kΩ
R
2.4 kΩ
V
V
FB1
FB2
1.5 μH
OUT
OUT
V
IN
= 3.3 V
= 1.2 V
= 5 V
IN
2
= 5 V, V
C
10 μF
(Typical characteristics)
OUT
V
GND
OUT
OUT
High-side
MOSFET
MOSFET
Low-side
= 3.3 V,
●
●
●
LCD TVs
Plasma TVs
Digital home appliances
●
●
Servers
PCs
Application Examples
Application Examples
SOP Advance
●
●
Copies
Amusement equipment
PS-8
●
Game consoles