TK15J60U(F) Toshiba, TK15J60U(F) Datasheet - Page 3
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TK15J60U(F)
Manufacturer Part Number
TK15J60U(F)
Description
MOSFET N-CH 600V 15A TO-3P
Manufacturer
Toshiba
Datasheet
1.TK15J60UF.pdf
(6 pages)
Specifications of TK15J60U(F)
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
300 mOhm @ 7.5A, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
15A
Vgs(th) (max) @ Id
5V @ 1mA
Gate Charge (qg) @ Vgs
17nC @ 10V
Input Capacitance (ciss) @ Vds
950pF @ 10V
Power - Max
170W
Mounting Type
Through Hole
Package / Case
TO-3P
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.3 Ohms
Drain-source Breakdown Voltage
600 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
15 A
Power Dissipation
170 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
TK15J60U(F)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
TK15J60U(F)
Manufacturer:
TOS
Quantity:
2 522
100
10
0.1
10
30
24
18
12
8
6
4
2
0
1
6
0
0.1
0
0
Common source
Tc = 25°C
Pulse test
Common source
V DS = 20 V
Pulse test
Common source
V DS = 10 V
Pulse test
Drain−source voltage V
Gate−source voltage V
1
2
Drain current I
15
10
1
2
4
⎪Y
I
I
D
D
25
Tc = −55°C
8
fs
– V
– V
⎪ − I
DS
GS
100
D
3
6
D
25
10
Tc = −55°C
GS
(A)
DS
100
7
V GS = 5.8 V
4
8
(V)
(V)
6.5
6.8
6.2
6
100
10
5
3
0.01
30
24
18
12
0.1
10
10
6
0
8
6
2
0
4
1
0
0
1
Common source
Tc = 25°C
Pulse test
15
10
Drain−source voltage V
Gate−source voltage V
10
4
Drain current I
R
20
V
8
DS (ON)
V GS = 10 V
I
DS
D
– V
10
– V
DS
GS
− I
30
12
D
15
8.5
I D = 15A
7.5
D
4
GS
(A)
DS
Common source
Tc = 25°C
Pulse test
Common source
Tc = 25°C
Pulse test
V GS = 6.2 V
16
40
(V)
(V)
TK15J60U
2008-06-11
7.5
8
6.3
7
100
50
20