PMF370XN,115 NXP Semiconductors, PMF370XN,115 Datasheet
PMF370XN,115
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PMF370XN T/R
PMF370XN T/R
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PMF370XN,115 Summary of contents
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MBD128 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. 1.2 Features 1.3 Applications 1.4 Quick reference data 2. Pinning information Table 1: Pinning - SOT363 (SC-88), simplified outline and symbol Pin ...
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Philips Semiconductors 3. Ordering information Table 2: Ordering information Type number Package Name PMG370XN SC-88 4. Limiting values Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter V drain-source voltage (DC ...
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Philips Semiconductors 120 P der (%) 100 P tot ---------------------- - P = 100% der P tot 25 C Fig 1. Normalized total power dissipation as a function of solder point temperature ...
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Philips Semiconductors 5. Thermal characteristics Table 4: Thermal characteristics Symbol Parameter R thermal resistance from junction to solder point th(j-sp) 5.1 Transient thermal impedance th(j-sp) (K/ 0.5 0.2 0.1 0.05 0.02 10 single pulse ...
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Philips Semiconductors 6. Characteristics Table 5: Characteristics unless otherwise specified. j Symbol Parameter Static characteristics V drain-source breakdown voltage (BR)DSS V gate-source threshold voltage GS(th) I drain-source leakage current DSS I gate-source leakage current GSS R ...
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Philips Semiconductors 2.5 4 (A) 2 1 Fig 5. Output characteristics: drain current as a function of drain-source voltage; typical values 2.5 ...
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Philips Semiconductors 2 V GS(th) (V) max 1.5 typ 1 min 0 0.25 mA Fig 9. Gate-source threshold voltage as a function of junction temperature ...
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Philips Semiconductors (A) 0.8 0.6 0.4 0.2 150 0.2 0 and 150 Fig 12. Source (diode forward) current ...
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Philips Semiconductors 7. Package outline Plastic surface mounted package; 6 leads y 6 pin 1 index DIMENSIONS (mm are the original dimensions UNIT max 1.1 0.30 0.25 mm 0.1 0.20 0.8 ...
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Philips Semiconductors 8. Revision history Table 6: Revision history Rev Date CPCN Description 01 20040213 - Product data (9397 750 12822). 9397 750 12822 Product data N-channel TrenchMOS™ extremely low level FET Rev. 01 — 13 February 2004 PMG370XN © ...
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Philips Semiconductors Philips Semiconductors 9. Data sheet status [1] Level Data sheet status Product status I Objective data Development II Preliminary data Qualification III Product data Production [1] Please consult the most recently issued data sheet before initiating or completing ...
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Philips Semiconductors Contents 1 Product profi 1.1 Description . . . . . ...