PMF370XN,115 NXP Semiconductors, PMF370XN,115 Datasheet

MOSFET N-CH 30V 870MA SOT-323

PMF370XN,115

Manufacturer Part Number
PMF370XN,115
Description
MOSFET N-CH 30V 870MA SOT-323
Manufacturer
NXP Semiconductors
Series
TrenchMOS™r
Datasheets
1.PMF370XN115.pdf (12 pages)
2.PMF370XN115.pdf (12 pages)

Specifications of PMF370XN,115

Package / Case
SC-70-3, SOT-323-3
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
440 mOhm @ 200mA, 4.5V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
870mA
Vgs(th) (max) @ Id
1.5V @ 250µA
Gate Charge (qg) @ Vgs
0.65nC @ 4.5V
Input Capacitance (ciss) @ Vds
37pF @ 25V
Power - Max
560mW
Mounting Type
Surface Mount
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.44 Ohm @ 4.5 V
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
12 V
Continuous Drain Current
0.87 A
Power Dissipation
560 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934057727115
PMF370XN T/R
PMF370XN T/R

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Meier Automation Equipment Co., Limited Meier Automation Equipment Co., Limited
Part Number:
PMF370XN,115
Manufacturer:
NXP/恩智浦
Quantity:
20 000
Company:
H&T Electronics H&T Electronics
Part Number:
PMF370XN,115
Quantity:
3 000
Company:
H&T Electronics H&T Electronics
Part Number:
PMF370XN,115
Quantity:
8 824
1. Product profile
2. Pinning information
Table 1:
Pin
1
2
3
4
5
6
Pinning - SOT363 (SC-88), simplified outline and symbol
Description
drain (d)
drain (d)
gate (g)
source (s)
drain (d)
drain (d)
MBD128
1.1 Description
1.2 Features
1.3 Applications
1.4 Quick reference data
N-channel enhancement mode field-effect transistor in a plastic package using
TrenchMOS™ technology.
PMG370XN
N-channel TrenchMOS™ extremely low level FET
Rev. 01 — 13 February 2004
Surface mounted package
Low on-state resistance
Driver circuits
V
P
DS
tot
0.69 W
30 V
Simplified outline
Top view
SOT363 (SC-88)
6
1
5
2
4
3
MSA370
Symbol
Footprint 40% smaller than SOT23
Low threshold voltage.
Switching in portable appliances.
I
R
D
DSon
0.96 A
440 m .
MBB076
g
d
s
Product data

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PMF370XN,115 Summary of contents

Page 1

MBD128 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. 1.2 Features 1.3 Applications 1.4 Quick reference data 2. Pinning information Table 1: Pinning - SOT363 (SC-88), simplified outline and symbol Pin ...

Page 2

Philips Semiconductors 3. Ordering information Table 2: Ordering information Type number Package Name PMG370XN SC-88 4. Limiting values Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter V drain-source voltage (DC ...

Page 3

Philips Semiconductors 120 P der (%) 100 P tot ---------------------- - P = 100% der P tot 25 C Fig 1. Normalized total power dissipation as a function of solder point temperature ...

Page 4

Philips Semiconductors 5. Thermal characteristics Table 4: Thermal characteristics Symbol Parameter R thermal resistance from junction to solder point th(j-sp) 5.1 Transient thermal impedance th(j-sp) (K/ 0.5 0.2 0.1 0.05 0.02 10 single pulse ...

Page 5

Philips Semiconductors 6. Characteristics Table 5: Characteristics unless otherwise specified. j Symbol Parameter Static characteristics V drain-source breakdown voltage (BR)DSS V gate-source threshold voltage GS(th) I drain-source leakage current DSS I gate-source leakage current GSS R ...

Page 6

Philips Semiconductors 2.5 4 (A) 2 1 Fig 5. Output characteristics: drain current as a function of drain-source voltage; typical values 2.5 ...

Page 7

Philips Semiconductors 2 V GS(th) (V) max 1.5 typ 1 min 0 0.25 mA Fig 9. Gate-source threshold voltage as a function of junction temperature ...

Page 8

Philips Semiconductors (A) 0.8 0.6 0.4 0.2 150 0.2 0 and 150 Fig 12. Source (diode forward) current ...

Page 9

Philips Semiconductors 7. Package outline Plastic surface mounted package; 6 leads y 6 pin 1 index DIMENSIONS (mm are the original dimensions UNIT max 1.1 0.30 0.25 mm 0.1 0.20 0.8 ...

Page 10

Philips Semiconductors 8. Revision history Table 6: Revision history Rev Date CPCN Description 01 20040213 - Product data (9397 750 12822). 9397 750 12822 Product data N-channel TrenchMOS™ extremely low level FET Rev. 01 — 13 February 2004 PMG370XN © ...

Page 11

Philips Semiconductors Philips Semiconductors 9. Data sheet status [1] Level Data sheet status Product status I Objective data Development II Preliminary data Qualification III Product data Production [1] Please consult the most recently issued data sheet before initiating or completing ...

Page 12

Philips Semiconductors Contents 1 Product profi 1.1 Description . . . . . ...

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