PMF370XN,115 NXP Semiconductors, PMF370XN,115 Datasheet - Page 5

• Manufacturer Part Number: PMF370XN,115
• Description: MOSFET N-CH 30V 870MA SOT-323
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of PMF370XN,115

• Package / Case: SC-70-3, SOT-323-3
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 440 mOhm @ 200mA, 4.5V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 870mA
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 0.65nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 37pF @ 25V
• Power - Max: 560mW
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.44 Ohm @ 4.5 V
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 12 V
• Continuous Drain Current: 0.87 A
• Power Dissipation: 560 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934057727115; PMF370XN T/R; PMF370XN T/R

Philips Semiconductors
6. Characteristics
Table 5:
T
9397 750 12822
Product data
Symbol Parameter
Static characteristics
V
V
I
I
R
Dynamic characteristics
Q
Q
Q
C
C
C
t
t
t
t
Source-drain diode
V
DSS
GSS
d(on)
r
d(off)
f
j
(BR)DSS
GS(th)
SD
DSon
iss
oss
rss
g(tot)
gs
gd
= 25 C unless otherwise specified.
drain-source breakdown voltage
gate-source threshold voltage
drain-source leakage current
gate-source leakage current
drain-source on-state resistance
total gate charge
gate-source charge
gate-drain (Miller) charge
input capacitance
output capacitance
reverse transfer capacitance
turn-on delay time
rise time
turn-off delay time
fall time
source-drain (diode forward) voltage I
Characteristics
Conditions
I
I
V
V
V
V
I
Figure 13
V
Figure 11
V
V
D
D
D
S
Rev. 01 — 13 February 2004
DS
GS
GS
GS
GS
DD
GS
T
T
T
T
T
T
T
T
T
= 0.3 A; V
= 1 A; V
= 0.25 mA; V
= 1 A; V
j
j
j
j
j
j
j
j
j
= 30 V; V
= 12 V; V
= 4.5 V; I
= 2.5 V; I
= 0 V; V
= 15 V; R
= 4.5 V; R
= 25 C
= 55 C
= 25 C
= 150 C
= 55 C
= 25 C
= 150 C
= 25 C
= 150 C
DD
GS
GS
DS
D
D
= 15 V; V
GS
L
G
= 0 V
DS
= 0.2 A;
= 0.1 A;
= 15 ;
= 0 V;
DS
= 25 V; f = 1 MHz;
N-channel TrenchMOS™ extremely low level FET
= 6
= 0 V
= 0 V
= V
Figure 12
GS
GS
Figure 7
Figure 7
;
Figure 9
= 4.5 V;
and
and
8
8
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Min
30
27
0.5
0.35
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
PMG370XN
Typ
-
-
1
-
-
-
-
10
370
629
550
0.65
0.14
0.18
37
8.5
5.5
6.5
9.5
14
5.5
0.78
Max
-
-
1.5
-
1.8
1
100
100
440
748
650
-
-
-
-
-
-
-
-
-
-
1.2
Unit
V
V
V
V
V
nA
m
m
m
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
V
5 of 12
A
A