PSMN013-100PS,127 NXP Semiconductors, PSMN013-100PS,127 Datasheet - Page 11

• Manufacturer Part Number: PSMN013-100PS,127
• Description: MOSFET N-CH 100V 68A TO220AB
• Manufacturer: NXP Semiconductors

Specifications of PSMN013-100PS,127

• Package / Case: TO-220AB-3
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 13.9 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 68A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 59nC @ 10V
• Input Capacitance (ciss) @ Vds: 3195pF @ 50V
• Power - Max: 170W
• Mounting Type: Through Hole
• Gate Charge Qg: 59 nC
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 25 mOhms
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 68 A
• Power Dissipation: 170 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-4976-5

NXP Semiconductors
8. Revision history
Table 7.
PSMN013-100PS_2
Product data sheet
Document ID
PSMN013-100PS_2
Modifications:
PSMN013-100PS_1
Revision history
20090917
Release date
20100122
•
Data sheet status changed from Objective to Product.
All information provided in this document is subject to legal disclaimers.
Data sheet status
Product data sheet
Objective data sheet
Rev. 02 — 22 January 2010
N-channel 100V 13.9mΩ standard level MOSFET in TO220.
Change notice
-
-
PSMN013-100PS
Supersedes
PSMN013-100PS_1
-
© NXP B.V. 2010. All rights reserved.
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