PSMN013-100PS,127 NXP Semiconductors, PSMN013-100PS,127 Datasheet - Page 8

• Manufacturer Part Number: PSMN013-100PS,127
• Description: MOSFET N-CH 100V 68A TO220AB
• Manufacturer: NXP Semiconductors

Specifications of PSMN013-100PS,127

• Package / Case: TO-220AB-3
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 13.9 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 68A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 59nC @ 10V
• Input Capacitance (ciss) @ Vds: 3195pF @ 50V
• Power - Max: 170W
• Mounting Type: Through Hole
• Gate Charge Qg: 59 nC
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 25 mOhms
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 68 A
• Power Dissipation: 170 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-4976-5

NXP Semiconductors
PSMN013-100PS_2
Product data sheet
Fig 11. Sub-threshold drain current as a function of
Fig 13. Drain-source on-state resistance as a function
R
(mΩ)
DSon
(A)
I
10
10
10
10
10
10
D
−1
−2
−3
−4
−5
−6
30
25
20
15
10
gate-source voltage
of drain current; typical values
0
0
V
GS
(V) = 4.5
20
5
6
2
min
40
10
typ
4
60
max
V
20
All information provided in this document is subject to legal disclaimers.
GS
003aad578
I
D
(V)
03aa35
(A)
Rev. 02 — 22 January 2010
80
6
N-channel 100V 13.9mΩ standard level MOSFET in TO220.
Fig 12. Normalized drain-source on-state resistance
Fig 14. Gate-source voltage as a function of gate
a
V
(V)
GS
3.2
2.4
1.6
0.8
10
0
8
6
4
2
0
-60
factor as a function of junction temperature
charge; typical values
0
15
0
PSMN013-100PS
V
DS
60
30
= 50V
120
45
© NXP B.V. 2010. All rights reserved.
Q
003aad774
003a a d583
T
G
j
(°C)
(nC)
180
60
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