PSMN013-100PS,127 NXP Semiconductors, PSMN013-100PS,127 Datasheet - Page 5

• Manufacturer Part Number: PSMN013-100PS,127
• Description: MOSFET N-CH 100V 68A TO220AB
• Manufacturer: NXP Semiconductors

Specifications of PSMN013-100PS,127

• Package / Case: TO-220AB-3
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 13.9 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 68A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 59nC @ 10V
• Input Capacitance (ciss) @ Vds: 3195pF @ 50V
• Power - Max: 170W
• Mounting Type: Through Hole
• Gate Charge Qg: 59 nC
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 25 mOhms
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 68 A
• Power Dissipation: 170 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-4976-5

NXP Semiconductors
6. Characteristics
Table 6.
PSMN013-100PS_2
Product data sheet
Symbol
Static characteristics
V
V
I
I
R
R
Dynamic characteristics
Q
Q
Q
Q
Q
V
C
C
C
DSS
GSS
(BR)DSS
GS(th)
GS(pl)
DSon
G
iss
oss
rss
G(tot)
GS
GS(th)
GS(th-pl)
GD
Characteristics
Parameter
drain-source
breakdown voltage
gate-source threshold
voltage
drain leakage current
gate leakage current
drain-source on-state
resistance
internal gate resistance
(AC)
total gate charge
gate-source charge
pre-threshold
gate-source charge
post-threshold
gate-source charge
gate-drain charge
gate-source plateau
voltage
input capacitance
output capacitance
reverse transfer
capacitance
Conditions
I
I
I
Figure 10
I
Figure 10
I
Figure 10
V
V
V
V
V
Figure 12
V
Figure 12
V
Figure 13
f = 1 MHz
I
Figure 14
I
I
Figure 14
I
Figure 15
I
Figure 15
V
V
T
D
D
D
D
D
D
D
D
D
D
j
DS
DS
GS
GS
GS
GS
GS
DS
DS
= 0.25 mA; V
= 0.25 mA; V
= 1 mA; V
= 1 mA; V
= 1 mA; V
= 25 A; V
= 0 A; V
= 25 A; V
= 25 A; V
= 25 A; V
= 25 °C; see
All information provided in this document is subject to legal disclaimers.
= 100 V; V
= 100 V; V
= 50 V; see
= 50 V; V
= 20 V; V
= -20 V; V
= 10 V; I
= 10 V; I
= 10 V; I
and
and
and
and
DS
Rev. 02 — 22 January 2010
DS
DS
DS
DS
DS
DS
DS
D
D
D
= 0 V; V
GS
DS
11
DS
15
15
14
= 15 A; T
= 15 A; T
= 15 A; T
= 50 V; V
= 50 V; V
= 50 V; V
= 50 V; V
GS
GS
= V
= V
= V
Figure 16
GS
GS
Figure 15
= 0 V; T
= 0 V; f = 1 MHz;
N-channel 100V 13.9mΩ standard level MOSFET in TO220.
= 0 V; T
= 0 V; T
= 0 V; T
= 0 V; T
= 0 V; T
GS
GS
GS
; T
; T
; T
GS
j
j
j
j
j
j
GS
GS
GS
GS
= 10 V
j
= 175 °C; see
= 25 °C; see
= -55 °C; see
= 100 °C; see
= 175 °C; see
= 25 °C; see
j
= 25 °C
j
j
= 25 °C
j
j
and
= 125 °C
= 25 °C
= 10 V; see
= 10 V; see
= 10 V; see
= 10 V; see
= -55 °C
= 25 °C
14
PSMN013-100PS
Min
90
100
1
2
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ
-
-
-
3
-
-
0.06
10
10
-
29.5
10.8
1
59
47.6
13.8
9.2
4.6
17
4.4
3195
221
136
© NXP B.V. 2010. All rights reserved.
Max
-
-
-
4
4.6
100
2
100
100
25
38.9
13.9
-
-
-
-
-
-
-
-
-
-
-
Unit
V
V
V
V
V
µA
µA
nA
nA
mΩ
mΩ
mΩ
Ω
nC
nC
nC
nC
nC
nC
V
pF
pF
pF
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