RDN120N25FU6 Rohm Semiconductor, RDN120N25FU6 Datasheet - Page 2

• Manufacturer Part Number: RDN120N25FU6
• Description: MOSFET N-CH 250V 12A TO-220FN
• Manufacturer: Rohm Semiconductor

Specifications of RDN120N25FU6

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 210 mOhm @ 6A, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 12A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 62nC @ 10V
• Input Capacitance (ciss) @ Vds: 1224pF @ 10V
• Power - Max: 40W
• Mounting Type: Through Hole
• Package / Case: TO-220FN-3 (Straight Leads)
• Resistance Drain-source Rds (on): 0.16 Ohms
• Drain-source Breakdown Voltage: 250 V
• Continuous Drain Current: 12 A
• Power Dissipation: 40 W
• Mounting Style: Through Hole
• Gate Charge Qg: 31 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Transistors
Forward voltage
Reverse recovery time
Reverse recovery charge
∗ Pulsed
Gate-Source Leakage
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Threshold Voltage
Static Drain-Source On-State
Resistance
Forward Transfer Admittance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
∗ Pulsed
Electrical characteristics (Ta=25°C)
Body diode characteristics (Source-drain) (Ta=25°C)
Parameter
Parameter
Symbol
V
Q
t
SD
rr
rr
V
Symbol
R
V
⏐Y
∗
∗
∗
(BR) DSS
t
t
I
C
I
DS (on)
C
C
Q
GS (th)
d (on)
d (off)
Q
GSS
Q
DSS
t
t
oss
rss
iss
r
f
gs
gd
fs
g
Min.
⏐
−
−
−
∗
∗
∗
∗
∗
∗
∗
∗
∗
Typ.
0.95
169
−
Min.
250
2.0
3.7
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Max.
2.0
−
−
1224
Typ.
0.16
31.0
11.0
443
154
6.1
7.0
Unit
⎯
⎯
⎯
⎯
17
32
58
28
µC
ns
V
I
I
di/dt= 100A / µs
S
DR
= 6A, V
= 12A, V
Max.
0.21
62.0
±10
4.0
25
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
GS
Conditions
=0V
GS
=0V
Unit
µA
µA
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
V
V
Ω
S
V
I
V
V
I
V
V
V
f=1MHz
I
V
R
R
V
V
I
D
D
D
D
GS
DS
DS
DS
DS
GS
GS
DD
GS
L
G
=250µA, V
=6A, V
=6.0A, V
=12A
=16.7Ω
=10Ω
= ±30V, V
=250V, V
=10V, I
=10V, I
=10V
=0V
=10V
=125V
=10V
RDN120N25
Rev.A
Conditions
GS
DD
D
=10V
D
=1mA
=6.0A
GS
GS
DS
=0V
100V
=0V
=0V
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